I-silicon nitride ebotshelelwe kwi-silicon carbide
I-Si3N4 edibeneyo ye-SiC ye-ceramic refractory material, ixutywe kunye ne-SIC ephezulu ecocekileyo yomgubo kunye ne-Silicon powder, emva kwekhosi ye-slip casting, i-reaction sintered phantsi kwe-1400 ~ 1500 ° C.Ngexesha le-sintering, ukugcwalisa i-Nitrogen ecocekileyo ephezulu kwiziko, emva koko i-silicon iya kusabela nge-Nitrogen kwaye ivelise i-Si3N4, ngoko ke i-Si3N4 i-Si3N4 eboshiweyo yezinto ze-SiC yenziwe nge-silicon nitride (23%) kunye ne-silicon carbide (75%) njengeyona nto iphambili ekrwada. , ixutywe nezinto eziphilayo, kwaye ibunjwe ngumxube, i-extrusion okanye ukugalela, emva koko yenziwe emva kokumiswa kunye ne-nitrogenization.
Iimpawu kunye neenzuzo:
1.Hukunyamezela ubushushu
I-2.I-conductivity ephezulu ye-thermal kunye nokuxhatshazwa kokutshatyalaliswa
I-3.Amandla aphezulu omatshini kunye nokuxhatshazwa kwe-abrasion
I-4.Ukusebenza kakuhle kwamandla kunye nokumelana nokubola
Sibonelela ngomgangatho ophezulu kunye nokuchaneka komatshini we-NSiC amacandelo e-ceramic aqhuba
1.I-Slip casting
2.Ukukhupha
3.Uni Axial Pressing
4.Isostatic Pressing
I-datasheet yezinto eziphathekayo
| >Ukwakheka kweeKhemikhali | Sic | 75% |
| Si3N4 | ≥23% | |
| Mahala Si | 0% | |
| Ubuninzi bobuninzi (g/cm3) | 2.70～2.80 | |
| I-porosity ebonakalayo (%) | 12～15 | |
| Goba amandla kuma-20 ℃(MPa) | 180～190 | |
| Goba amandla kwi-1200 ℃(MPa) | 207 | |
| Goba amandla kwi-1350 ℃(MPa) | 210 | |
| Amandla acinezelayo kuma-20 ℃(MPa) | 580 | |
| I-Thermal conductivity kwi-1200 ℃(w/mk) | 19.6 | |
| I-coefficient yokwandiswa kweThermal kwi-1200 ℃(x 10-6/C) | 4.70 | |
| Ukuxhathisa ukothuka kwe-Thermal | Egqwesileyo | |
| Max.ubushushu (℃) | 1600 | |
I-WeiTai Energy Technology Co., Ltd. ngumboneleli ohamba phambili we-semiconductor ceramics kunye nomvelisi kuphela e-China onokunika ngaxeshanye ucoceko oluphezulu lwe-silicon carbide ceramic (ingakumbi i-Recrystallized SiC) kunye ne-CVD SiC yokwaleka.Ukongeza, inkampani yethu izibophelele kumasimi e-ceramic afana ne-alumina, i-aluminium nitride, i-zirconia, kunye ne-silicon nitride, njl.
Iimveliso zethu eziphambili ziquka: i-silicon carbide etching disc, i-silicon carbide boat tow, i-silicon carbide wafer boat (Photovoltaic & Semiconductor), i-silicon carbide furnace tube, i-silicon carbide cantilever paddle, i-silicon carbide chucks, i-silicon carbide beam, kunye ne-CVD SiC coating kunye ne-TaC. ukutyabeka.Iimveliso ezisetyenziswa ikakhulu kwi-semiconductor kunye namashishini e-photovoltaic, njengezixhobo zokukhula kwekristale, i-epitaxy, i-etching, ukupakishwa, ukugquma kunye neziko lokusasaza, njl.
Inkampani yethu inezixhobo ezipheleleyo zokuvelisa ezifana nokubumba, ukuthambisa, ukusetyenzwa, izixhobo zokugquma, njl., ezinokugqiba onke amakhonkco ayimfuneko emveliso yemveliso kwaye ibe nokulawulwa okuphezulu komgangatho wemveliso;Isicwangciso esilungileyo sokuvelisa sinokukhethwa ngokweemfuno zemveliso, okubangela iindleko eziphantsi kunye nokubonelela abathengi ngeemveliso ezikhuphisanayo;Singakwazi ukuguquguquka kunye nokusebenza ngokufanelekileyo kwimveliso esekelwe kwiimfuno zokuhanjiswa kwe-odolo kunye ngokubambisana neenkqubo zolawulo lwe-intanethi, ukubonelela abathengi ngokukhawuleza kunye nexesha lokuhambisa eliqinisekisiweyo.
