Blue/green LED epitaxy

Inkcazelo emfutshane:

Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC.


Iinkcukacha zeMveliso

Iithegi zeMveliso

Iimpawu eziphambili:

1. Ukumelana nobushushu obuphezulu be-oxidation:

Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.

2. Ukucoceka okuphezulu : yenziwe yi-chemical vapor deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.

3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.

4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye nee-reagents eziphilayo.

 Iinkcukacha eziphambili zeI-CVD-SIC Coating

Iipropati zeSiC-CVD

Ulwakhiwo lweCrystal FCC isigaba β
Ukuxinana g/cm ³ 3.21
Ukuqina Vickers ubulukhuni 2500
Ubungakanani benkozo μm 2~10
Ucoceko lweMichiza % 99.99995
Ubushushu Umthamo J·kg-1 ·K-1 640
Ubushushu bokunciphisa 2700
Amandla eFelexural MPa (RT 4-point) 415
Imodulus eselula I-Gpa (4pt bend, 1300℃) 430
Ukwandiswa kweThermal (CTE) 10-6K-1 4.5
I-Thermal conductivity (W/mK) 300

 

 
LED Epitaxy
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