I-silicon nitride kunye ne-silicon carbide zomelele kakhulu iikhompawundi ze-covalent bond, zineempawu ezifanayo zomzimba kunye neekhemikhali, i-silicon nitride idityaniswe nemveliso ye-silicon carbide enokumelana nobushushu obuphezulu, ukumelana nokugqwala, ukumelana nokunxiba, ukumelana nokhukuliseko, ukuxhathisa kwe-oxidation kunye nothotho lweempawu ezigqwesileyo.I-Silicon nitride kunye ne-silicon carbide njengezixhobo ezichasayo zodidi oluphezulu kwi-atmospheres ezahlukeneyo ubushushu bokusetyenziswa obuqhelekileyo bunokufikelela kwi-1500 ℃ okanye njalo, busetyenziswa ngokubanzi kwi-ceramics, i-metallurgy engeyoyo, isinyithi kunye nesinyithi sesinyithi, isinyithi somgubo, ishishini lemichiza kunye namanye amashishini.
I-Silicon nitride edityaniswe ne-silicon carbide imathiriyeli kunye neentsimbi ezingenayo i-ferrous ayingeni, kwaye ineempawu zokugquma ezilungileyo, ngoko ke isetyenziswa ngokubanzi kwinkqubo yokuvelisa izinyithi ezingenayo i-aluminiyam, ubhedu kunye ne-zinc, ngakumbi eyona nto ifanelekileyo ukuveliswa kwezitena zodonga lwe-electrolytic cell side.
| Into | Isalathiso sezitena zomlilo | Inkcazo yeKiln | Isalathiso semveliso emile |
| I-porosity ebonakalayo(%） | <16 | <16 | <14 |
| Unizi lolwapho kuyiwa khona(g/cm3） | 2 2.65 | 2 2.65 | 2 2.68 |
| Amandla oxinzelelo kwiqondo lokushisa(MPa） | 2 160 | 2 170 | 2 180 |
| Ukugoba amandla kwiqondo lobushushu begumbi(1400X:） MPa | 2 40 | 2 45 | 2 45 |
| Amandla okugoba ubushushu obuphezulu(1400r） MPa | 2 50 | 2 50 | 2 50 |
| I-Coefficient yokwandiswa kwe-thermal(110CTC）xioVC | <4.18 | <4.18 | <4.18 |
| I-Thermal conductivity(1100C） | 216 | 2 16 | 216 |
| IiRefractories(°C ） | 1800 | 1800 | 1800 |
| 0.2 MPa Ukushisa okuthambisayo phantsi komthwalo(X:) | 1600 | 1600 | > 1700 |
| Ubushushu bokusebenza okuphezulu(°C） | 1550 | 1550 | 1550 |
