SiC Ceramic

I-silicon carbide luhlobo lwe-synthetic carbide kunye ne-SiC molekyuli.Xa zinikwe amandla, isilica kunye nekhabhoni zikholisa ukubunjwa kumaqondo obushushu angaphezu kwama-2000°C.I-Silicon carbide inoxinano lwethiyori ye-3.18g / cm3, ubunzima be-Mohs obulandela idayimane, kunye ne-microhardness ye-3300kg / mm3 phakathi kwe-9.2 kunye ne-9.8.Ngenxa yobunzima bayo obuphezulu kunye nokumelana nokunxiba okuphezulu, ineempawu zokumelana nobushushu obuphezulu kwaye isetyenziselwa iintlobo ezahlukeneyo zokungagugi, ukumelana nokugqwala kunye nobushushu obuphezulu.Luhlobo olutsha lwetekhnoloji ye-ceramic enganxibiyo.

I-1, iipropati zeMichiza.

(1) Ukumelana ne-oxidation: Xa i-silicon carbide imathiriyeli ishushu kwi-1300 ° C emoyeni, i-silicon dioxide layer ekhuselayo iqala ukuveliswa kumphezulu we-silicon carbide crystal.Ngokuqina komgangatho okhuselayo, i-silicon carbide yangaphakathi iyaqhubeka i-oxidize, ukuze i-silicon carbide ibe nokuchasana kakuhle kwe-oxidation.Xa ubushushu bufikelela ngaphezu kwe-1900K (1627 ° C), ifilimu ekhuselayo ye-silicon dioxide iqala ukonakala, kwaye i-oxidation ye-silicon carbide iye yaqina, ngoko ke i-1900K yiqondo lokushisa elisebenzayo le-silicon carbide kwindawo ene-oxidizing.

(2) Ukuchasana kwe-Acid kunye ne-alkali: ngenxa yendima yefilimu yokukhusela i-silicon dioxide, i-silicon carbide ineepropati kwindima yefilimu ekhuselayo ye-silicon dioxide.

2, iipropati zomzimba kunye noomatshini.

(1) Ubuninzi: I-particle density ye-silicon carbide crystals isondele kakhulu, ngokuqhelekileyo ithathwa njenge-3.20g / mm3, kunye nokupakishwa kwemvelo kwe-silicon carbide abrasives kuphakathi kwe-1.2-1.6g / mm3, kuxhomekeke kubukhulu be-particle, ukwakheka kobungakanani besuntswana kunye nokumila kobungakanani besuntswana.

(2) Ubunzima: Ubunzima be-Mohs be-silicon carbide yi-9.2, i-micro-density ye-Wessler yi-3000-3300kg / mm2, ukuqina kwe-Knopp yi-2670-2815kg / mm, i-abrasive iphezulu kune-corundum, kufuphi nedayimane, i-cubic. i-boron nitride kunye ne-boron carbide.

(3) I-Thermal conductivity: iimveliso ze-silicon ze-carbide zine-conductivity ephezulu ye-thermal, i-coefficient encinci yokwandisa i-thermal, ukuxhathisa ukothuka kwe-thermal, kunye nezixhobo eziphezulu zokumelana ne-refractory.

3, iipropati zoMbane.