I-Silicon nitride yi-ceramic engwevu enokuqina okuphezulu kokuqhekeka, ukuxhathisa ukothuka kobushushu, kunye neempawu ezingenakungeneka kwiintsimbi ezinyibilikisiweyo.
Usebenzisa ezi mpawu, isetyenziswa kumalungu enjini yokutsha yangaphakathi anje ngeendawo zenjini yemoto, imibhobho ye-welding machine welding, njl.
Ngokumelana kwayo okuphezulu kunye namandla omatshini aphezulu, izicelo zayo ekuthwaleni iinxalenye ze-roller, iibheringi ze-shaft ezijikelezayo kunye nezixhobo zokuvelisa izixhobo ze-semiconductor ezisecaleni zihlala zisanda.
| Iimpawu ezibonakalayo zezinto ze-silicon nitride | ISilicon nitride (Sic) | |||
| Umbala | Mnyama | |||
| Umxholo wecandelo eliphambili | - | |||
| Uphawu oluphambili | Ubunzima bokukhanya, ukumelana nokunxiba, ukumelana nobushushu obuphezulu. | |||
| Usetyenziso oluphambili | Iindawo ezikwaziyo ukumelana nobushushu, iindawo ezikwaziyo ukumelana nobushushu, iindawo ezikwaziyo ukumelana nomhlwa. | |||
| Ukuxinana | g/cc | 3.2 | ||
| I-Hydroscopicity | % | 0 | ||
| Uphawu lomatshini | Vickers ubulukhuni | GPA | 13.9 | |
| Ukugoba amandla | MPa | 500-700 | ||
| Amandla acinezelayo | MPa | 3500 | ||
| Imodyuli yolutsha | GPA | 300 | ||
| Umlinganiselo wePoisson | - | 0.25 | ||
| Ukuqina kokwaphuka | MPA · m1/2 | 5-7 | ||
| Uphawu lobushushu | I-Coefficient yokwandiswa komgca | 40-400℃ | x10-6/℃ | 2.6 |
| I-Thermal conductivity | 20 ° | W/(m·k) | 15-20 | |
| Ubushushu obuthile | J/(kg·k)x103 |
| ||
| Uphawu lombane | Ukuxhathisa umthamo | 20℃ | Ω·cm | >1014 |
| Amandla e-Dielectric |
| KV/mm | 13 | |
| I-Dielectric rhoqo |
| - |
| |
| I-Dielectric loss coefficient |
| x10-4 |
| |
| Uphawu lwekhemikhali | I-asidi ye-nitric | 90℃ | Ukuhla ukusinda | <1.0<> |
| Vitriol | 95℃ | <0.4<> | ||
| I-sodium hydroxide | 80℃ | <3.6<> | ||
