Inkcazo
Abathwali beWaferngeI-Silicon Carbide (SiC) Ukugqumaukusuka kwi-semicera ziyilelwe ngobuchule ukukhula kwe-epitaxial ephezulu, iqinisekisa iziphumo ezilungileyoYiyo EpitaxykwayeSiC Epitaxyizicelo. I-Semicera's precision-engineered carriers yakhelwe ukumelana neemeko ezinzima, izenza zibe yinxalenye ebalulekileyo kwiinkqubo ze-MOCVD Susceptor kumashishini afuna ukuchaneka okuphezulu kunye nokuqina.
Ezi zithwali ze-wafer zinezinto ezininzi, ezixhasa iinkqubo ezibalulekileyo kunye nezixhobo ezifanaPSS Etching Carrier, I-ICP Etching Carrier, kwayeUmthwali we-RTP. I-Coating yabo ye-SiC eyomeleleyo yonyusa ukusebenza kwezicelo ezinjeI-LED EpitaxialI-Susceptor kunye ne-Monocrystalline Silicon, iqinisekisa iziphumo ezihambelanayo nakwiindawo ezifunayo.
Ifumaneka kwizicwangciso ezininzi, ezifana ne-Barrel Susceptor kunye ne-Pancake Susceptor, aba bathwali badlala indima ebalulekileyo kwi-photovoltaic kunye ne-semiconductor yokuvelisa, ukuxhasa ukuveliswa kweeNdawo ze-Photovoltaic kunye nokuququzelela i-GaN kwiinkqubo ze-SiC Epitaxy. Ngoyilo lwabo oluphezulu, aba bathwali bayi-asethi ephambili kubavelisi abajolise kwimveliso ephezulu.
Iimpawu eziphambili
1 .Ukucoceka okuphezulu kwe-SiC egqunywe igraphite
2. Ukumelana nobushushu obuphezulu kunye nokufana kwe-thermal
3. KulungileI-SiC icwecwe ngekristalekwindawo egudileyo
4. Ukuqina okuphezulu ngokuchasene nokucocwa kweekhemikhali
IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:
| SiC-CVD | ||
| Ukuxinana | (g/cc) | 3.21 |
| Amandla e-Flexural | (Mpa) | 470 |
| Ukwandiswa kweThermal | (10-6/K) | 4 |
| I-Thermal conductivity | (W/mK) | 300 |
Ukupakisha kunye nokuThumela
Ubunakho bokubonelela:
10000 Iqhekeza/Amaqhekeza ngenyanga
UkuPakisha kunye nokuhanjiswa:
Ukupakisha:Ukupakisha okuMgangatho & okuqinileyo
Ingxowa yePoly + Ibhokisi + Ikhathoni + Iphalethi
Izibuko:
Ningbo/Shenzhen/Shanghai
Ixesha lokukhokhela:
| Ubuninzi (Amaqhekeza) | 1-1000 | >1000 |
| Est. Ixesha(iintsuku) | 30 | Kuza kuthethathethwana |
