I-Silicon esekelwe kwi-GaN epitaxy

I-Silicon esekwe kwi-GaN epitaxy Umfanekiso obonakalayo

Inkcazelo emfutshane:

ISemicera Energy Technology Co., Ltd. ngumboneleli ohamba phambili weeseramics zesemiconductor eziphucukileyo kwaye nguye kuphela umenzi eTshayina onokunika ngaxeshanye ukucoceka okuphezulu kwesilicon carbide ceramic (ingakumbiRecrystallized SiC) kunye neCVD SiC coating.Ukongeza, inkampani yethu izibophelele kumasimi e-ceramic afana ne-alumina, i-aluminium nitride, i-zirconia, kunye ne-silicon nitride, njl.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Ingcaciso yeMveliso

Inkampani yethu ibonelelaUkwaleka kweSiCInkqubo yeenkonzo nge-CVD indlela kumphezulu wegraphite, iiseramikhi kunye nezinye izinto, ukuze iigesi ezikhethekileyo eziqulethe i-carbon kunye ne-silicon ziphendule kubushushu obuphezulu ukuze zifumane iimolekyuli eziphezulu ze-SiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, zenzaUmaleko okhuselayo we-SIC.

Iimpawu eziphambili:

1. Ukumelana nobushushu obuphezulu be-oxidation:

Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.

2. Ukucoceka okuphezulu : yenziwe yi-chemical vapor deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.

3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.

4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye nee-reagents eziphilayo.

IiNgcaciso eziphambili ze-CVD-SIC Coating

Iipropati zeSiC-CVD
Ulwakhiwo lweCrystal	FCC isigaba β
Ukuxinana	g/cm ³	3.21
Ukuqina	Vickers ubulukhuni	2500
Ubungakanani benkozo	μm	2~10
Ucoceko lweMichiza	%	99.99995
Ubushushu Umthamo	J·kg-1 ·K-1	640
Ubushushu bokunciphisa	℃	2700
Amandla eFelexural	MPa (RT 4-point)	415
Imodulus eselula	I-Gpa (4pt bend, 1300℃)	430
Ukwandiswa kweThermal (CTE)	10-6K-1	4.5
I-Thermal conductivity	(W/mK)	300