Inkampani yethu ibonelelaUkwaleka kweSiCinkqubo yeenkonzo kumphezulu wegraphite, iiseramikhi kunye nezinye izinto nge-CVD indlela, ukuze iigesi ezikhethekileyo eziqulethe i-carbon kunye ne-silicon zinokusabela kubushushu obuphezulu ukuze zifumane iimolekyuli ze-Sic ezicocekileyo, ezinokuthi zifakwe kumphezulu wezinto ezigqunyiweyo ukwenzaUmaleko okhuselayo we-SiCyohlobo lwe-epitaxy barrel hy pnotic.
Iimpawu eziphambili:
1 .Ukucoceka okuphezulu kwe-SiC egqunywe igraphite
2. Ukumelana nobushushu obuphezulu kunye nokufana kwe-thermal
3. KulungileI-SiC icwecwe ngekristalekwindawo egudileyo
4. Ukuqina okuphezulu ngokuchasene nokucocwa kweekhemikhali
Iinkcukacha eziphambili zeI-CVD-SIC Coating
| Iipropati zeSiC-CVD | ||
| Ulwakhiwo lweCrystal | FCC isigaba β | |
| Ukuxinana | g/cm ³ | 3.21 |
| Ukuqina | Vickers ubulukhuni | 2500 |
| Ubungakanani benkozo | μm | 2~10 |
| Ucoceko lweMichiza | % | 99.99995 |
| Ubushushu Umthamo | J·kg-1 ·K-1 | 640 |
| Ubushushu bokunciphisa | ℃ | 2700 |
| Amandla eFelexural | MPa (RT 4-point) | 415 |
| Imodulus eselula | I-Gpa (4pt bend, 1300℃) | 430 |
| Ukwandiswa kweThermal (CTE) | 10-6K-1 | 4.5 |
| I-Thermal conductivity | (W/mK) | 300 |
