I-Graphite Susceptor ene-Silicon Carbide Coating, i-barel tray

I-Graphite Susceptor ene-Silicon Carbide Coating, i-tray ye-barel Umfanekiso obonakalayo

Inkcazelo emfutshane:

I-Semicera inikezela ngoluhlu olubanzi lwee-susceptors kunye nezixhobo zegraphite ezenzelwe ii-epitaxy reactors ezahlukeneyo.

Ngobudlelwane obucwangcisiweyo kunye nee-OEM ezikhokelayo kwishishini, ubuchwephesha bezinto ezininzi, kunye nobuchule obuphambili bokuvelisa, iSemicera ihambisa uyilo olulungiselelwe ukuhlangabezana neemfuno ezithile zesicelo sakho.Ukuzibophelela kwethu ekugqweseni kuqinisekisa ukuba ufumana izisombululo ezizezona zifanelekileyo kwiimfuno zakho ze-epitaxy reactor.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Inkcazo

Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC.

malunga (1)

malunga (2)

Iimpawu eziphambili

1 .Ukucoceka okuphezulu kwe-SiC egqunywe igraphite

2. Ukumelana nobushushu obuphezulu kunye nokufana kwe-thermal

3. Ikristale ye-SiC ecocekileyo igqunywe kwindawo egudileyo

4. Ukuqina okuphezulu ngokuchasene nokucocwa kweekhemikhali

IiNgcaciso eziphambili ze-CVD-SIC Coating

Iipropati zeSiC-CVD
Ulwakhiwo lweCrystal	FCC isigaba β
Ukuxinana	g/cm ³	3.21
Ukuqina	Vickers ubulukhuni	2500
Ubungakanani benkozo	μm	2~10
Ucoceko lweMichiza	%	99.99995
Ubushushu Umthamo	J·kg-1 ·K-1	640
Ubushushu bokunciphisa	℃	2700
Amandla eFelexural	MPa (RT 4-point)	415
Imodulus eselula	I-Gpa (4pt bend, 1300℃)	430
Ukwandiswa kweThermal (CTE)	10-6K-1	4.5
I-Thermal conductivity	(W/mK)	300