Ubushushu obuphezulu kunye nokunganyangeki kwe-LED Silicon Carbide etching tray (ICP etching tray)

Inkcazelo emfutshane:

I-Semicera Energy Technology Co., Ltd. ngumboneleli okhokelayo okhethekileyo kwi-wafer kunye ne-semiconductor consumables ephezulu.Sizinikezele ekunikezeni umgangatho ophezulu, othembekileyo, kunye neemveliso ezintsha kwimveliso ye-semiconductor,imboni ye-photovoltaickunye neminye imimandla enxulumeneyo.

Umgca wethu wemveliso uquka i-SiC/TaC egqunywe ngeemveliso zegraphite kunye neemveliso ze-ceramic, ezibandakanya izinto ezahlukeneyo ezifana ne-silicon carbide, i-silicon nitride, kunye ne-aluminium oxide kunye nokunye.

Njengomthengisi othembekileyo, siyakuqonda ukubaluleka kwezinto ezisetyenziswayo kwinkqubo yokwenziwa kwemveliso, kwaye sizimisele ukuhambisa iimveliso ezihlangabezana nemigangatho ephezulu yomgangatho wokuzalisekisa iimfuno zabathengi bethu.

 

Iinkcukacha zeMveliso

Iithegi zeMveliso

Ingcaciso yeMveliso

Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC.

Iimpawu eziphambili:

1. Ukumelana nobushushu obuphezulu be-oxidation:

Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.

2. Ukucoceka okuphezulu : yenziwe yi-chemical vapor deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.

3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.

4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye nee-reagents eziphilayo.

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IiNgcaciso eziphambili ze-CVD-SIC Coating

Iipropati zeSiC-CVD

Ulwakhiwo lweCrystal

FCC isigaba β

Ukuxinana

g/cm ³

3.21

Ukuqina

Vickers ubulukhuni

2500

Ubungakanani benkozo

μm

2~10

Ucoceko lweMichiza

%

99.99995

Ubushushu Umthamo

J·kg-1 ·K-1

640

Ubushushu bokunciphisa

2700

Amandla eFelexural

MPa (RT 4-point)

415

Imodulus eselula

I-Gpa (4pt bend, 1300℃)

430

Ukwandiswa kweThermal (CTE)

10-6K-1

4.5

I-Thermal conductivity

(W/mK)

300

 

Semicera Indawo yokusebenzela
Indawo yokusebenza yeSemicera 2
Umatshini wezixhobo
Ukucutshungulwa kwe-CNN, ukucocwa kweekhemikhali, ukugquma kwe-CVD
Inkonzo yethu

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