Kwintsimi ye-semiconductor, ukuzinza kwecandelo ngalinye kubaluleke kakhulu kuyo yonke inkqubo. Nangona kunjalo, kwindawo ephezulu yokushisa, i-graphite i-oxidized ngokulula kwaye ilahleka, kwaye i-coating ye-SiC inokubonelela ngokhuseleko oluzinzileyo kwiingxenye zegraphite. KwiSemiceraiqela, sinezixhobo zethu zokucoca igraphite, ezinokulawula ukucoceka kwegraphite ngaphantsi kwe-5ppm. Ukucoceka kwe-silicon carbide coating ingaphantsi kwe-0.5 ppm.
✓Umgangatho ophezulu kwimarike yaseTshayina
✓Inkonzo entle rhoqo kuwe, 7*24 iiyure
✓Umhla omfutshane wokuhanjiswa
✓I-MOQ encinci yamkelekile kwaye yamkelwe
✓Iinkonzo ezilungiselelwe wena
Epitaxy Growth Susceptor
I-silicon / i-silicon carbide wafers kufuneka ihambe kwiinkqubo ezininzi eziza kusetyenziswa kwizixhobo zombane. Inkqubo ebalulekileyo yi-silicon / i-sic epitaxy, apho i-silicon / i-sic wafers iqhutyelwa kwisiseko segraphite. Izibonelelo ezikhethekileyo zeSemicera's silicon carbide-coated-coated graphite base ibandakanya ukucoceka okuphezulu kakhulu, ukutyabeka okufanayo, kunye nobomi benkonzo ende kakhulu. Kananjalo banokumelana neekhemikhali eziphezulu kunye nokuzinza kwe-thermal.
Ukuveliswa kweChip ye-LED
Ngethuba lokugquma okubanzi kwe-reactor ye-MOCVD, isiseko seplanethi okanye umthwali uhambisa i-wafer substrate. Ukusebenza kwezinto ezisisiseko kunempembelelo enkulu kumgangatho wokugquma, nto leyo echaphazela izinga le-scrap ye-chip. Isiseko seSemicera's silicon carbide-coated base sonyusa ukusebenza kakuhle kweewafers ze-LED ezikumgangatho ophezulu kunye nokunciphisa ukutenxa kobude bamaza. Sikwabonelela ngezixhobo ezongezelelweyo zegraphite kuzo zonke iireactor zeMOCVD ezisetyenziswayo ngoku. Sinako ukunxiba phantse naliphi na icandelo nge-silicon carbide coating, nokuba i-diameter yecandelo ifikelela kwi-1.5M, sisenokwambatha ngesilicon carbide.
Ummandla weSemiconductor, Inkqubo ye-Oxidation Diffusion, njl.
Kwinkqubo ye-semiconductor, inkqubo yokwandiswa kwe-oxidation ifuna ukucoceka okuphezulu kwemveliso, kwaye kwi-Semicera sinikezela ngeenkonzo zesiko kunye ne-CVD yokwambathisa uninzi lweengxenye ze-silicon carbide.
Lo mfanekiso ulandelayo ubonisa i-silicon carbide slurry esekwe ngokurhabaxa ye-Semicea kunye ne-silicon carbide furnace tyhubhu ecocwe kwi-100.0-kwinqanabaengenathuliigumbi. Abasebenzi bethu basebenza ngaphambi kokulala. Ukucoceka kwe-silicon carbide yethu kunokufikelela kwi-99.99%, kwaye ukucoceka kwe-sic coating kukhulu kune-99.99995%.