I-Silicon Carbide Coated Crystal Growth Susceptor

Inkcazelo emfutshane:

I-Semicera inikezela ngoluhlu olubanzi lwee-susceptors kunye nezixhobo zegraphite ezenzelwe ii-epitaxy reactors ezahlukeneyo.

Ngobudlelwane obucwangcisiweyo kunye nee-OEM ezikhokelayo kwishishini, ubuchwephesha bezinto ezininzi, kunye nobuchule obuphambili bokuvelisa, iSemicera ihambisa uyilo olulungiselelwe ukuhlangabezana neemfuno ezithile zesicelo sakho. Ukuzibophelela kwethu ekugqweseni kuqinisekisa ukuba ufumana izisombululo ezizezona zifanelekileyo kwiimfuno zakho ze-epitaxy reactor.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Inkampani yethu ibonelelaUkwaleka kweSiCinkqubo yeenkonzo kumphezulu wegraphite, iiseramikhi kunye nezinye izinto nge-CVD indlela, ukuze iigesi ezikhethekileyo eziqulethe i-carbon kunye ne-silicon zinokusabela kubushushu obuphezulu ukuze zifumane iimolekyuli ze-Sic ezicocekileyo, ezinokuthi zifakwe kumphezulu wezinto ezigqunyiweyo ukwenzaUmaleko okhuselayo we-SiCyohlobo lwe-epitaxy barrel hy pnotic.

Iimpawu eziphambili:

1 .Ukucoceka okuphezulu kwe-SiC egqunywe igraphite

2. Ukumelana nobushushu obuphezulu kunye nokufana kwe-thermal

3. KulungileI-SiC icwecwe ngekristalekwindawo egudileyo

4. Ukuqina okuphezulu ngokuchasene nokucocwa kweekhemikhali

Iinkcukacha eziphambili zeI-CVD-SIC Coating

Iipropati zeSiC-CVD
Ulwakhiwo lweCrystal	FCC isigaba β
Ukuxinana	g/cm ³	3.21
Ukuqina	Vickers ubulukhuni	2500
Ubungakanani benkozo	μm	2~10
Ucoceko lweMichiza	%	99.99995
Ubushushu Umthamo	J·kg-1 ·K-1	640
Ubushushu bokunciphisa	℃	2700
Amandla eFelexural	MPa (RT 4-point)	415
Imodulus eselula	I-Gpa (4pt bend, 1300℃)	430
Ukwandiswa kweThermal (CTE)	10-6K-1	4.5
I-Thermal conductivity	(W/mK)	300