I-Reactor ye-SiC-Coated Barel ehlala ihleli

IReactor ye-SiC-Coated ye-Barel eGqibelekayo ebonisiweyo

Inkcazelo emfutshane:

I-Semicera inikezela ngoluhlu olubanzi lwee-susceptors kunye nezixhobo zegraphite ezenzelwe ii-epitaxy reactors ezahlukeneyo.

Ngobudlelwane obucwangcisiweyo kunye nee-OEM ezikhokelayo kwishishini, ubuchwephesha bezinto ezininzi, kunye nobuchule obuphambili bokuvelisa, iSemicera ihambisa uyilo olulungiselelwe ukuhlangabezana neemfuno ezithile zesicelo sakho.Ukuzibophelela kwethu ekugqweseni kuqinisekisa ukuba ufumana izisombululo ezizezona zifanelekileyo kwiimfuno zakho ze-epitaxy reactor.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Inkampani yethu ibonelelaUkwaleka kweSiCinkqubo yeenkonzo kumphezulu wegraphite, iiseramikhi kunye nezinye izinto nge-CVD indlela, ukuze iigesi ezikhethekileyo eziqulethe i-carbon kunye ne-silicon zinokusabela kubushushu obuphezulu ukuze zifumane iimolekyuli ze-Sic ezicocekileyo, ezinokuthi zifakwe kumphezulu wezinto ezigqunyiweyo ukwenzaUmaleko okhuselayo we-SiCyohlobo lwe-epitaxy barrel hy pnotic.

Iimpawu eziphambili:

1 .Ukucoceka okuphezulu kwe-SiC egqunywe igraphite

2. Ukumelana nobushushu obuphezulu kunye nokufana kwe-thermal

3. KulungileI-SiC icwecwe ngekristalekwindawo egudileyo

4. Ukuqina okuphezulu ngokuchasene nokucocwa kweekhemikhali

Iinkcukacha eziphambili zeI-CVD-SIC Coating

Iipropati zeSiC-CVD
Ulwakhiwo lweCrystal	FCC isigaba β
Ukuxinana	g/cm ³	3.21
Ukuqina	Vickers ubulukhuni	2500
Ubungakanani benkozo	μm	2~10
Ucoceko lweMichiza	%	99.99995
Ubushushu Umthamo	J·kg-1 ·K-1	640
Ubushushu bokunciphisa	℃	2700
Amandla eFelexural	MPa (RT 4-point)	415
Imodulus eselula	I-Gpa (4pt bend, 1300℃)	430
Ukwandiswa kweThermal (CTE)	10-6K-1	4.5
I-Thermal conductivity	(W/mK)	300