Semiconductori-silicon carbide (i-SiC) iiwafers, le nto entsha iye yavela ngokuthe ngcembe kwiminyaka yakutshanje, kunye neempawu zayo ezikhethekileyo zomzimba kunye neekhemikhali, zifake amandla amasha kwishishini le-semiconductor.Iifafa zeSiC, usebenzisa i-monocrystals njengezinto eziluhlaza, zikhuliswe ngononophelo yi-chemical vapor deposition (CVD), kwaye imbonakalo yazo ibonelela ngamathuba okwenziwa kobushushu obuphezulu, i-frequency ephezulu kunye nezixhobo zombane zamandla aphezulu.
Kwintsimi ye-elektroniki yamandla,Iifafa zeSiCzisetyenziswa ekwenzeni iziguquli zamandla ezikumgangatho ophezulu, iitshaja, izixhobo zombane kunye nezinye iimveliso.Kwintsimi yonxibelelwano, isetyenziselwa ukuvelisa izixhobo ze-RF eziphezulu ze-frequency kunye nesantya esiphezulu kunye nezixhobo ze-optoelectronic, ukubeka ilitye lembombo eliqinileyo kuhola wendlela yobudala bolwazi.Kwicandelo le-elektroniki yeemoto,Iifafa zeSiCyenza izixhobo zombane eziphezulu, ezithembeke kakhulu kwimoto ukukhapha ukhuseleko lokuqhuba lomqhubi.
Ngenkqubela phambili eqhubekayo yeteknoloji, iteknoloji yemveliso yeIifafa zeSiCliya likhula ngakumbi nangakumbi, kwaye ixabiso liyancipha ngokuthe ngcembe.Esi sixhobo sitsha sibonisa amandla amakhulu ekuphuculeni ukusebenza kwesixhobo, ukunciphisa ukusetyenziswa kwamandla, kunye nokuphucula ukukhuphisana kwemveliso.Ukujonga phambili,Iifafa zeSiCiya kudlala indima ebaluleke ngakumbi kushishino lwe-semiconductor, ukuzisa lula kunye nokhuseleko ebomini bethu.
Masijonge phambili kule nkwenkwezi ye-semiconductor eqaqambileyo-i-SiC wafer, kwikamva lenkqubela phambili yesayensi kunye nethekhnoloji ukuchaza isahluko esiqaqambileyo.
Ixesha lokuposa: Nov-27-2023