I-Silicon Carbide Substrates | Ii-SiC Wafers

ISilicon Carbide Substrates|SiC Wafers Featured Featured Image

Inkcazelo emfutshane:

I-WeiTai Energy Technology Co., Ltd. ngumboneleli ohamba phambili okhethekileyo kwi-wafer kunye ne-semiconductor consumables ephezulu.Sizinikezele ekunikezeni umgangatho ophezulu, othembekileyo, kunye neemveliso ezintsha kwimveliso ye-semiconductor, imboni ye-photovoltaic kunye nezinye iindawo ezinxulumene nazo.

Umgca wethu wemveliso uquka i-SiC/TaC egqunywe ngeemveliso zegraphite kunye neemveliso ze-ceramic, ezibandakanya izinto ezahlukeneyo ezifana ne-silicon carbide, i-silicon nitride, kunye ne-aluminium oxide kunye nokunye.

Okwangoku, sikuphela komvelisi obonelela ngobunyulu be-99.9999% ye-SiC yokwambathisa kunye ne-99.9% ye-silicon carbide ehlaziyiweyo.Ubude obuphezulu bokugquma kweSiC sinokwenza i-2640mm.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Silicon carbide (SiC) imathiriyeli yekristale enye inobubanzi bebhendi enkulu (~Si 3 amaxesha), i-thermal conductivity ephezulu (~Si 3.3 amaxesha okanye GaAs 10 amaxesha), izinga eliphezulu lokufuduka kwe-electron (~Si 2.5 amaxesha), ukuphuka okuphezulu kombane intsimi (~ Si 10 amaxesha okanye GaAs 5 amaxesha) kunye nezinye iimpawu ezibalaseleyo.

Izixhobo ze-SiC zinezibonelelo ezingenakubuyiselwa kwindawo yobushushu obuphezulu, uxinzelelo oluphezulu, amaza ombane aphezulu, izixhobo ze-elektroniki ezinamandla aphezulu kunye nokusetyenziswa okugqithisileyo kokusingqongileyo okunje nge-aerospace, emkhosini, amandla enyukliya, njl. izicelo, kwaye ngokuthe ngcembe ziye zaba zezona ziphambili zeesemiconductors zamandla.

Iimpawu ze-4H-SiC Silicon carbide substrate

Into项目	Iinkcukacha参数
Iipolytype 晶型	4H -SiC	6H-SiC
Ububanzi 晶圆直径	2 intshi \|3 intshi \|4 intshi \|6intshi	2 intshi \|3 intshi \|4 intshi \|6intshi
Ukutyeba 厚度	330 μm ~ 350 μm	330 μm ~ 350 μm
Ukuqhuba 导电类型	N – uhlobo / Semi-insulating N型导电片/ 半绝缘片	N – uhlobo / Semi-insulating N型导电片/ 半绝缘片
I-Dopant 掺杂剂	N2 ( Nitrogen )V ( Vanadium )	N2 ( Nitrogen ) V ( Vanadium )
Ukuqhelaniswa 晶向	Kwi-axis <0001> I-off axis <0001> off 4 °	Kwi-axis <0001> I-off axis <0001> off 4 °
Ukuxhathisa 电阻率	0.015 ~ 0.03 ohm-cm (4H-N)	0.02 ~ 0.1 ohm-cm (6H-N)
Uxinaniso lweMibhobho (MPD) 微管密度	≤10/cm2 ~ ≤1/cm2	≤10/cm2 ~ ≤1/cm2
TTV 总厚度变化	≤ 15 μm	≤ 15 μm
Isaphetha / Warp 翘曲度	≤25 μm	≤25 μm
Umphezulu 表面处理	DSP/SSP	DSP/SSP
IBanga 产品等级	Ibanga leMveliso / loPhando	Ibanga leMveliso / loPhando
Crystal Stacking Ulandelelwano 堆积方式	ABCB	ABCABC
Iparamitha yeLattice 晶格参数	a=3.076A , c=10.053A	a=3.073A , c=15.117A
Umzekelo/eV(Band-gap) 禁带宽度	3.27 eV	3.02 eV
ε(Dielectric Constant) 介电常数	9.6	9.66
Refraction Index 折射率	n0 =2.719 ne =2.777	n0 =2.707 , ne =2.755

Iimpawu ze-6H-SiC Silicon Carbide substrate

Into项目	Iinkcukacha参数
Iipolytype 晶型	6H-SiC
Ububanzi 晶圆直径	4 intshi \|6intshi
Ukutyeba 厚度	350μm ~ 450μm
Ukuqhuba 导电类型	N – uhlobo / Semi-insulating N型导电片/ 半绝缘片
I-Dopant 掺杂剂	N2( Nitrogen) V ( Vanadium )
Ukuqhelaniswa 晶向	<0001> off 4 ° ± 0.5 °
Ukuxhathisa 电阻率	0.02 ~ 0.1 ohm-cm (Udidi lwe-6H-N)
Uxinaniso lweMibhobho (MPD) 微管密度	≤ 10/cm2
TTV 总厚度变化	≤ 15 μm
Isaphetha / Warp 翘曲度	≤25 μm
Umphezulu 表面处理	Si Ubuso: CMP, Epi-Ready C Ubuso: I-Optical Polish
IBanga 产品等级	Ibakala lophando