Umgangatho ophezulu we-silicon carbide cantilever paddle

Umgangatho ophezulu wesiko lesilicon carbide cantilever paddle Umfanekiso obonakalayo

Inkcazelo emfutshane:

I-Semicera Semiconductor Technology Co., Ltd. ngumboneleli okhokelayo okhethekileyo kwi-wafer kunye ne-semiconductor consumables ephezulu.Sizinikezele ekunikezeni umgangatho ophezulu, othembekileyo, kunye neemveliso ezintsha kwimveliso ye-semiconductor,imboni ye-photovoltaickunye neminye imimandla enxulumeneyo.

Umgca wethu wemveliso uquka i-SiC/TaC egqunywe ngeemveliso zegraphite kunye neemveliso ze-ceramic, ezibandakanya izinto ezahlukeneyo ezifana ne-silicon carbide, i-silicon nitride, kunye ne-aluminium oxide kunye nokunye.

Njengomthengisi othembekileyo, siyakuqonda ukubaluleka kwezinto ezisetyenziswayo kwinkqubo yokwenziwa kwemveliso, kwaye sizimisele ukuhambisa iimveliso ezihlangabezana nemigangatho ephezulu yomgangatho wokuzalisekisa iimfuno zabathengi bethu.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Semicera ibonisa isiko elikumgangatho ophezului-silicon carbide cantilever paddlesyenzelwe ukuphakamisa iinkqubo zokwenziwa kwesemiconductor. I-innovativeI-SiC ipaddleuyilo luqinisekisa ukuqina okukhethekileyo kunye nokuxhathisa okuphezulu kwe-thermal, kuyenza ibe yinto ebalulekileyo yokuphatha i-wafer kwiindawo ezinzima zobushushu obuphezulu.

II-silicon carbide paddleyakhelwe ukumelana nemijikelo ye-thermal egqithisileyo ngelixa igcina imfezeko yesakhiwo, iqinisekisa uthutho lwe-wafer oluthembekileyo ngexesha lezigaba ezibalulekileyo zemveliso ye-semiconductor. Ngamandla omatshini aphezulu, okuisikhephe esisicabayehlisa umngcipheko womonakalo kwiiwafers, ezikhokelela kwizivuno eziphezulu kunye nomgangatho wemveliso ongaguqukiyo.

Enye yezinto eziphambili ezintsha kwiSemicera's SiC paddle ilele kwiinketho zayo zoyilo lwesiko. Yenzelwe ukuhlangabezana neemfuno ezithile zemveliso, i-paddle inika ukuguquguquka ekudityanisweni kwezixhobo ezahlukeneyo zokuseta, iyenza ibe sisisombululo esifanelekileyo kwiinkqubo zokwenziwa kwanamhlanje. Ulwakhiwo olukhaphukhaphu kodwa olomeleleyo lwenza ukuba kube lula ukuphatha kwaye lunciphise ixesha lokuphumla, okunegalelo ekuphuculeni ukusebenza kakuhle kwimveliso ye-semiconductor.

Ukongeza kwiipropati zayo zokushisa kunye nezomatshini, iI-silicon carbide paddleinika ukuxhathisa okugqwesileyo kweekhemikhali, ukuyivumela ukuba isebenze ngokuthembekileyo nakwiimekobume zekhemikhali ezirhabaxa. Oku kuyenza ifaneleke ngokukodwa ukusetyenziswa kwiinkqubo ezibandakanya i-etching, deposition, kunye nonyango lobushushu obuphezulu, apho ukugcina imfezeko yesikhephe esisicaba kubalulekile ekuqinisekiseni iziphumo ezikumgangatho ophezulu.

Iimpawu ezibonakalayo zeRecrystallized Silicon Carbide
Ipropati	Ixabiso eliqhelekileyo
Ubushushu bokusebenza (°C)	1600°C (neoksijini), 1700°C (ukunciphisa okusingqongileyo)
Umxholo weSiC	> 99.96%
Isiqulatho sasimahla Si	< 0.1%
Unizi lolwapho kuyiwa khona	2.60-2.70 g / cm³
I-porosity ebonakalayo	< 16%
Amandla oxinzelelo	> 600 MPa
Amandla okugoba okubandayo	80-90 MPa (20°C)
Amandla okugoba ashushu	90-100 MPa (1400°C)
Ukwandiswa kweThermal @1500°C	4.70 10^-6/°C
I-Thermal conductivity @1200°C	23 W/m•K
Imodyuli ye-elastic	240 GPA
Ukuxhathisa ukothuka kwe-Thermal	Ulunge kakhulu