I-epitaxy ye-LED eluhlaza okwesibhakabhaka / eluhlaza evela kwi-semicera inikezela ngezisombululo ezinqamlekileyo zokwenziwa kwe-LED ephezulu yokusebenza. Idizayinelwe ukuxhasa iinkqubo zokukhula kwe-epitaxial eziphambili, itekhnoloji ye-semicera yeBlue/green LED epitaxy iphucula ukusebenza kakuhle kunye nokuchaneka ekuveliseni ii-LED eziluhlaza kunye neziluhlaza, ezibaluleke kakhulu kwizicelo ezahlukeneyo ze-optoelectronic. Ukusebenzisa i-Si Epitaxy ye-state-of-art kunye ne-SiC Epitaxy, esi sisombululo siqinisekisa umgangatho obalaseleyo kunye nokuqina.
Kwinkqubo yokuvelisa, i-MOCVD Susceptor idlala indima ebalulekileyo, kunye namacandelo afana ne-PSS Etching Carrier, i-ICP Etching Carrier, kunye ne-RTP Carrier, eyenza indawo yokukhula kwe-epitaxial. I-epitaxy ye-Semicera eluhlaza okwesibhakabhaka / eluhlaza ye-LED yenzelwe ukubonelela ngenkxaso ezinzileyo ye-LED Epitaxial Susceptor, i-Barrel Susceptor, kunye ne-Monocrystalline Silicon, ukuqinisekisa ukuveliswa kweziphumo ezihambelanayo, eziphezulu.
Le nkqubo ye-epitaxy ibalulekile ekudaleni i-Photovoltaic Parts kwaye ixhasa izicelo ezifana ne-GaN kwi-SiC Epitaxy, ukuphucula ukusebenza kakuhle kwe-semiconductor jikelele. Nokuba kuqwalaselo lwePancake Susceptor okanye lusetyenziswe kwezinye iiseto eziphambili, i-semicera yeBlue / eluhlaza ye-epitaxy ye-LED izisombululo zibonelela ngokusebenza okuthembekileyo, ukunceda abavelisi ukuba bahlangabezane nemfuno ekhulayo yamacandelo aphezulu e-LED.
Iimpawu eziphambili:
1. Ukumelana nobushushu obuphezulu be-oxidation:
Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.
2. Ukucoceka okuphezulu : yenziwe yi-chemical vapor deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.
3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.
4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye nee-reagents eziphilayo.
Iinkcukacha eziphambili zeI-CVD-SIC Coating
Iipropati zeSiC-CVD | ||
Ulwakhiwo lweCrystal | FCC isigaba β | |
Ukuxinana | g/cm ³ | 3.21 |
Ukuqina | Vickers ubulukhuni | 2500 |
Ubungakanani benkozo | μm | 2~10 |
Ucoceko lweMichiza | % | 99.99995 |
Ubushushu Umthamo | J·kg-1 ·K-1 | 640 |
Ubushushu bokunciphisa | ℃ | 2700 |
Amandla eFelexural | MPa (RT 4-point) | 415 |
Imodulus eselula | I-Gpa (4pt bend, 1300℃) | 430 |
Ukwandiswa kweThermal (CTE) | 10-6K-1 | 4.5 |
I-Thermal conductivity | (W/mK) | 300 |