I-Tantalum Carbide Coating Pedestal Support Plate

I-Tantalum Carbide Coating Pedestal Ipleyiti yeNkxaso eFakelweyo Umfanekiso

Inkcazelo emfutshane:

I-Tantalum Carbide Coated Susceptor Plate ye-Semicera yenzelwe ukusetyenziswa kwi-silicon carbide epitaxy kunye nokukhula kwe-crystal. Inika inkxaso ezinzileyo kwiqondo lobushushu eliphezulu, elonakalisayo, okanye elinoxinzelelo oluphezulu, oluyimfuneko kwezi nkqubo eziphambili. Ngokuqhelekileyo isetyenziswe kwi-high-pressure reactors, izakhiwo zesithando somlilo, kunye nezixhobo zekhemikhali, iqinisekisa ukusebenza kwenkqubo kunye nokuzinza. Itekhnoloji yokugquma yeSemicera iqinisekisa umgangatho ophezulu kunye nokuthembeka kwizicelo zobunjineli ezifunayo.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Tantalum carbide ifakwe ipleyiti yenkxaso ye-susceptori-susceptor okanye isakhiwo senkxaso esigqunywe ngumaleko obhityileyo wetantalum carbide. Olu gquba lungenziwa kumphezulu we-susceptor ngobuchule obufana ne-physical vapor deposition (PVD) okanye i-chemical vapor deposition (CVD), inika i-susceptor iipropati eziphezulutantalum carbide.

I-Semicera ibonelela ngeengubo ezikhethekileyo ze-tantalum carbide (TaC) kumacandelo ahlukeneyo kunye nabathwali.Inkqubo ehamba phambili yokugqoka i-Semicera yenza iingubo ze-tantalum carbide (TaC) zifezekise ukucoceka okuphezulu, ukuzinza kweqondo lokushisa eliphezulu kunye nokunyamezela kweekhemikhali eziphezulu, ukuphucula umgangatho wemveliso ye-crystals ye-SIC / GAN kunye neengqimba ze-EPI (Isixhasi seTaC esigqunywe ngegraphite), kunye nokwandisa ubomi bamacandelo angundoqo we-reactor. Ukusetyenziswa kwetantalum carbide TaC coating kukusombulula ingxaki edge kunye nokuphucula umgangatho wokukhula kwekristale, kwaye iSemicera iye yasombulula itekhnoloji ye-tantalum carbide coating (CVD), ifikelele kwinqanaba eliphezulu lamazwe ngamazwe.

Emva kweminyaka yophuhliso, iSemicera yoyisile iteknoloji yeCVD TaCngeenzame ezidibeneyo zesebe leR&D. Iziphene kulula ukwenzeka kwinkqubo yokukhula kwee-wafers ze-SiC, kodwa emva kokusetyenziswaI-TaC, umahluko ubalulekile. Apha ngezantsi luthelekiso lweewafers ezine-TaC nangaphandle kwayo, kunye neendawo zeSimicera zokukhula kwekristale enye.

Iimpawu eziphambili zetantalum carbide coated base support plates ziquka:

1. Uzinzo oluphezulu lweqondo lokushisa: I-Tantalum carbide inozinzo oluphezulu lobushushu obuphezulu, okwenza ipleyiti yokuxhasa isiseko egqunyiweyo ilungele iimfuno zenkxaso kwiindawo zokusebenza zobushushu obuphezulu.

2. Ukumelana nokubola: I-Tantalum carbide coating inokumelana ne-corrosion, inokuxhathisa ukubola kweekhemikhali kunye ne-oxidation, kunye nokwandisa ubomi benkonzo yesiseko.

3. Ubulukhuni obuphezulu kunye nokumelana nokunxiba: Ubunzima obuphezulu be-tantalum carbide coating inika isiseko sepleyiti yokuxhasa ukuxhathisa ukunxiba kakuhle, okufanelekileyo kwizihlandlo ezifuna ukuxhathisa okuphezulu.

4. Ukuzinza kweekhemikhali: I-Tantalum carbide inozinzo oluphezulu kwizinto ezahlukeneyo zeekhemikhali, okwenza iplate yokuxhasa isiseko edibeneyo yenza kakuhle kwezinye iindawo ezinobungozi.

Ukusebenza okuphezulu kwetantalum carbide coating_ kuphucula ukusebenza kakuhle kwemveliso yemizi-mveliso kunye nokunciphisa iindleko zokugcinwa komfanekiso obonakalayo

Inxalenye ye-Tac yokukhula kwekristale enye

I-Antiwear tantalum carbide coating_ Ikhusela izixhobo ekunxibeni nasekudlekeni Umfanekiso okhoyo

Igraphite eneringi egqunywe yi-TaC

kunye nangaphandle kwe-TaC

Emva kokusebenzisa i-TaC (ekunene)

Ngaphezu koko, iSemicera'sIimveliso ezigqunywe yi-TaCbonisa ubomi benkonzo obude kunye nokumelana nobushushu obuphezulu xa kuthelekiswaIingubo zeSiC.Imilinganiselo yeLabhoratri ibonise ukuba yethuIingubo ze-TaCiyakwazi ukusebenza rhoqo kumaqondo obushushu ukuya kuma 2300 degrees Celsius ixesha elide. Ngezantsi yimizekelo yeesampulu zethu: