I-TaC Coated Graphite Ring yeSikhokelo

I-TaC Coated Graphite Ring eFakelweyo Umfanekiso

Inkcazelo emfutshane:

Umsesane weSikhokelo seSemicera Semiconductor we-TaC Coated Graphite yenzelwe ukukhula kwekristale yesilicon carbide, ibonelela ukuxhathisa okungaqhelekanga kunye nokuzinza kwe-thermal. Khetha i-Semicera kumacandelo athembekileyo kunye nokusebenza okuphezulu.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Izaziso zegraphite eziqatywe yi-TaCbhekisa ekubekeni umaleko obhityileyo wetantalum carbidekumphezulu wendandatho ye-graphite yesikhokelo sokuphucula ukuxhathisa ukunxiba, ukumelana nobushushu obuphezulu kunye nokuzinza kweekhemikhali. Olu gquba ludla ngokubunjwa kumphezulu weringi yesikhokelo segraphite ngobuchule obufana ne-physical vapour deposition (PVD) okanye i-chemical vapor deposition (CVD).

I-Semicera ibonelela ngeengubo ezikhethekileyo ze-tantalum carbide (TaC) kumacandelo ahlukeneyo kunye nabathwali.Inkqubo ehamba phambili yokugqoka i-Semicera yenza iingubo ze-tantalum carbide (TaC) zifezekise ukucoceka okuphezulu, ukuzinza kweqondo lokushisa eliphezulu kunye nokunyamezela kweekhemikhali eziphezulu, ukuphucula umgangatho wemveliso ye-crystals ye-SIC / GAN kunye neengqimba ze-EPI (Isixhasi seTaC esigqunywe ngegraphite), kunye nokwandisa ubomi bamacandelo angundoqo we-reactor. Ukusetyenziswa kwetantalum carbide TaC coating kukusombulula ingxaki edge kunye nokuphucula umgangatho wokukhula kwekristale, kwaye iSemicera iye yasombulula itekhnoloji ye-tantalum carbide coating (CVD), ifikelele kwinqanaba eliphezulu lamazwe ngamazwe.

Emva kweminyaka yophuhliso, iSemicera yoyisile iteknoloji yeCVD TaCngeenzame ezidibeneyo zesebe leR&D. Iziphene kulula ukwenzeka kwinkqubo yokukhula kwee-wafers ze-SiC, kodwa emva kokusetyenziswaI-TaC, umahluko ubalulekile. Apha ngezantsi luthelekiso lweewafers ezine-TaC nangaphandle kwayo, kunye neendawo zeSimicera zokukhula kwekristale enye.

Ezona mpawu ziphambili zezangqa zegraphite ezigqunywe yi-TaC ziquka:

1. Ukumelana nobushushu obuphezulu: I-TaC yokwambathisa inozinzo olubalaseleyo lobushushu obuphezulu kwaye inokugcina uzinzo kwindawo yobushushu obuphezulu.

2. Ukunxiba ukuxhathisa: Ubunzima obuphezulu be-tantalum carbide umaleko obhityileyo unika isikhokelo ring ukuxhathisa ukunxiba kakuhle kwaye yandisa ubomi bayo benkonzo.

3. Uzinzo kwiChemical: I-TaC iyabekeka inozinzo oluphezulu ngokuchasene nokuhlwa kwekhemikhali, iyenza ilungele usetyenziso kumajelo eendaba ezonakalisayo.

4. Ukunciphisa ukukhuhlana: Ukwaleka kwe-TaC kunokunciphisa ngokufanelekileyo ukungqubana phakathi kweringi yesikhokelo segraphite kunye namanye amacandelo kunye nokuphucula ukusebenza kakuhle kwezitywina zoomatshini.

Ukusebenza okuphezulu kwetantalum carbide coating_ kuphucula ukusebenza kakuhle kwemveliso yemizi-mveliso kunye nokunciphisa iindleko zokugcinwa komfanekiso obonakalayo

Inxalenye ye-Tac yokukhula kwekristale enye

I-Antiwear tantalum carbide coating_ Ikhusela izixhobo ekunxibeni nasekudlekeni Umfanekiso okhoyo

Igraphite eneringi egqunywe yi-TaC

kunye nangaphandle kwe-TaC

Emva kokusebenzisa i-TaC (ekunene)

Ngaphezu koko, iSemicera'sIimveliso ezigqunywe yi-TaCbonisa ubomi benkonzo obude kunye nokumelana nobushushu obuphezulu xa kuthelekiswaIingubo zeSiC.Imilinganiselo yeLabhoratri ibonise ukuba yethuIingubo ze-TaCiyakwazi ukusebenza rhoqo kumaqondo obushushu ukuya kuma 2300 degrees Celsius ixesha elide. Ngezantsi yimizekelo yeesampulu zethu: