Umsesane weCVD weSiC oqinileyo

Inkcazelo emfutshane:

Izangqa zeSiC zeCVD eziqinileyo ikakhulu zenziwe ngesilicon carbide (SiC), kwaye zineempawu ezibalaseleyo zomzimba nezekhemikhali. I-Silicon carbide yinto ye-ceramic enendawo ephezulu yokunyibilika, ubunzima obuphezulu kunye nokumelana nokugqwesa okugqwesileyo. Ibonisa i-thermal conductivity egqwesileyo, ukuzinza kweekhemikhali kunye namandla omatshini kumaqondo aphezulu okushisa, kwaye inokugqoka okuphezulu kunye nokuxhathisa kwe-abrasion.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Kutheni iSolid CVD SiC Ring?

Amakhonkco e-CVD SiC eqinilezisetyenziswa kakhulu kwiindawo zoshishino kunye nezenzululwazi kumaqondo obushushu aphezulu, ezonakalisayo kunye neendawo ezirhabaxa. Idlala indima ebalulekileyo kwiindawo ezininzi zokusetyenziswa, kubandakanya:

1. Ukwenziwa kweSemiconductor:Amakhonkco e-CVD SiC eqinileingasetyenziselwa ukufudumeza kunye nokupholisa izixhobo ze-semiconductor, ukubonelela ngolawulo oluzinzileyo lweqondo lokushisa ukuqinisekisa ukuchaneka kunye nokuhambelana kwenkqubo.

2. I-Optoelectronics: Ngenxa yokuhanjiswa kwayo okugqwesileyo kwe-thermal kunye nokumelana nobushushu obuphezulu,Amakhonkco e-CVD SiC eqinileinokusetyenziswa njengenkxaso kunye nezixhobo zokulahla ubushushu kwiilaser, izixhobo zonxibelelwano zefiber optic kunye namacandelo optical.

3. Umatshini ochanekileyo: Izindandatho eziqinileyo ze-CVD SiC zingasetyenziselwa izixhobo ezichanekileyo kunye nezixhobo kwiqondo lokushisa eliphezulu kunye neendawo ezinobungozi, ezifana neziko eliphezulu lokushisa, izixhobo ze-vacuum kunye ne-reactors zamakhemikhali.

4. Ishishini leMichiza: Izangqa ze-CVD zeSiC eziqinileyo zingasetyenziselwa kwiibhokisi, imibhobho kunye ne-reactors kwi-chemical reactions kunye neenkqubo ze-catalytic ngenxa yokumelana nokubola kunye nokuzinza kweekhemikhali.

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Isicelo

Epitaxy Growth Susceptor

I-silicon / i-silicon carbide wafers kufuneka ihambe kwiinkqubo ezininzi eziza kusetyenziswa kwizixhobo zombane. Inkqubo ebalulekileyo yi-silicon / i-sic epitaxy, apho i-silicon / i-sic wafers iqhutyelwa kwisiseko segraphite. Izibonelelo ezikhethekileyo zeSemicera's silicon carbide-coated-coated graphite base ibandakanya ukucoceka okuphezulu kakhulu, ukutyabeka okufanayo, kunye nobomi benkonzo ende kakhulu. Kananjalo banokumelana neekhemikhali eziphezulu kunye nokuzinza kwe-thermal.

I-Silicon Epitaxy Susceptor

I-Silicon Carbide Epitaxy Susceptor

Ukuveliswa kweChip ye-LED

Ngethuba lokugquma okubanzi kwe-reactor ye-MOCVD, isiseko seplanethi okanye umthwali uhambisa i-wafer substrate. Ukusebenza kwezinto ezisisiseko kunempembelelo enkulu kumgangatho wokugquma, nto leyo echaphazela izinga le-scrap ye-chip. Isiseko seSemicera's silicon carbide-coated base sonyusa ukusebenza kakuhle kweewafers ze-LED ezikumgangatho ophezulu kunye nokunciphisa ukutenxa kobude bamaza. Sikwabonelela ngezixhobo ezongezelelweyo zegraphite kuzo zonke iireactor zeMOCVD ezisetyenziswayo ngoku. Sinako ukunxiba phantse naliphi na icandelo nge-silicon carbide coating, nokuba i-diameter yecandelo ifikelela kwi-1.5M, sisenokwambatha ngesilicon carbide.

I-LED Epitaxy Susceptor

Ummandla weSemiconductor, Inkqubo ye-Oxidation Diffusion, njl.

Kwinkqubo ye-semiconductor, inkqubo yokwandiswa kwe-oxidation ifuna ukucoceka okuphezulu kwemveliso, kwaye kwi-Semicera sinikezela ngeenkonzo zesiko kunye ne-CVD yokwambathisa uninzi lweengxenye ze-silicon carbide.

Lo mfanekiso ulandelayo ubonisa i-silicon carbide slurry esekwe ngokurhabaxa ye-Semicea kunye ne-silicon carbide furnace tyhubhu ecocwe kwi-100.0-kwinqanabaengenathuliigumbi. Abasebenzi bethu basebenza ngaphambi kokulala. Ukucoceka kwe-silicon carbide yethu kunokufikelela kwi-99.99%, kwaye ukucoceka kwe-sic coating kukhulu kune-99.99995%.