I-Tantalum carbide (TaC)yimathiriyeli ye-ceramic echasene nobushushu obuphezulu obuphezulu kunye nenzuzo yendawo ephezulu yokunyibilika, ubunzima obuphezulu, uzinzo oluhle lweekhemikhali, amandla ombane kunye ne-thermal conductivity, njl.TaC ukutyabekainokusetyenziswa njenge-ablation-resistant coating, i-oxidation-resistant coating, kunye ne-resistant-resistant coating, kwaye isetyenziswa ngokubanzi kwi-aerospace yokukhusela i-thermal, i-semiconductor yesizukulwana sesithathu ukukhula kwekristale enye, i-electronics yamandla kunye nezinye iinkalo.
Inkqubo:
I-Tantalum carbide (TaC)luhlobo lwe-Ultra-high ubushushu obunganyangekiyo kwi-ceramic material kunye ne-advanteji yendawo ephezulu yokunyibilika, ubunzima obuphezulu, uzinzo oluhle lweekhemikhali, umbane oqinileyo kunye ne-thermal conductivity. Ngoko ke,TaC ukutyabekainokusetyenziswa njenge-ablation-resistant coating, i-oxidation-resistant coating, kunye ne-resistant-resistant coating, kwaye isetyenziswa ngokubanzi kwi-aerospace yokukhusela i-thermal, i-semiconductor yesizukulwana sesithathu ukukhula kwekristale enye, i-electronics yamandla kunye nezinye iinkalo.
Ubume bangaphakathi bokwaleka:
Sisebenzisa indlela ye-slurry-sintering ukulungiselelaIingubo ze-TaCyobunzima obahlukeneyo kwi-graphite substrates zobukhulu obahlukeneyo. Okokuqala, umgubo ophezulu ococekileyo oqulethe umthombo we-Ta kunye nomthombo we-C uqwalaselwe kunye ne-dispersant kunye ne-binder ukwenza i-uniform kunye ne-stable precursor slurry. Kwangaxeshanye, ngokobukhulu beendawo zegraphite kunye neemfuno zokutyebaTaC ukutyabeka, i-pre-coating ilungiselelwe ngokutshiza, ukugalela, ukungena kunye nezinye iifom. Okokugqibela, ifudunyezwa ukuya kuthi ga kwi-2200 ℃ kwindawo yevacuum ukulungiselela iyunifomu, exineneyo, isigaba esinye, kunye nekristale kakuhle.TaC ukutyabeka.
Ubume bangaphakathi bokwaleka:
Ubukhulu beTaC ukutyabekamalunga ne-10-50 μm, iinkozo zikhula kwi-orientation yamahhala, kwaye iqulethwe yi-TaC kunye nesigaba esisodwa sobuso obuphakathi kwesakhiwo se-cubic, ngaphandle kobunye ukungcola; i-coating is dense, isakhiwo sigqityiwe, kwaye i-crystallinity iphezulu.TaC ukutyabekainokuzalisa iipore kumphezulu wegraphite, kwaye idityaniswe ngokwekhemikhali kwimatrix yegraphite enegunya eliphezulu lokubopha. Umlinganiselo we-Ta ukuya ku-C kwi-coating usondele kwi-1: 1. Umgangatho we-GDMS wokufumanisa ubunyulu be-ASTM F1593, ukugxininiswa kokungcola kungaphantsi kwe-121ppm. I-arithmetic mean deviation (Ra) yeprofayili yokwambathisa yi-662nm.
Usetyenziso ngokubanzi:
GaN kunyeSiC epitaxialAmacandelo e-CVD reactor, abandakanya abathwali be-wafer, izitya zesathelayithi, ii-showerheads, iikhava eziphezulu kunye neesusceptors.
I-SiC, i-GaN kunye ne-AlN ye-crystal yamacandelo okukhula, kubandakanywa ii-crucibles, ii-crystal holders zembewu, izikhokelo zokuhamba kunye nezihlungi.
Amacandelo oshishino, kubandakanywa izinto zokufudumeza ezixhathisayo, imibhobho, amakhonkco okukhusela kunye nezixhobo zokubethelela.
Ezona mpawu:
Uzinzo lobushushu obuphezulu kwi-2600 ℃
Ibonelela ngokhuseleko oluzinzileyo kwimekobume yeekhemikhali ezirhabaxa ze-H2, NH3, SiH4kunye noSi vapor
Ifanelekile kwimveliso yobuninzi kunye nemijikelezo emfutshane yemveliso.
