I-silicon nitride ebotshelelwe kwi-silicon carbide
I-Si3N4 edibeneyo ye-SiC ye-ceramic refractory material, ixutywe kunye ne-SIC ephezulu ecocekileyo yomgubo kunye ne-Silicon powder, emva kwekhosi ye-slip casting, i-reaction sintered phantsi kwe-1400 ~ 1500 ° C. Ngexesha le-sintering, ukugcwalisa i-Nitrogen ecocekileyo ephezulu kwiziko, emva koko i-silicon iya kusabela nge-Nitrogen kwaye ivelise i-Si3N4, ngoko ke i-Si3N4 i-Si3N4 eboshiweyo yezinto ze-SiC yenziwe nge-silicon nitride (23%) kunye ne-silicon carbide (75%) njengeyona nto iphambili ekrwada. ,ixutywe nezinto eziphilayo, kwaye ibunjwe ngumxube, i-extrusion okanye ukugalelwa, emva koko yenziwa emva kokumiswa kunye ne-nitrogenization.
Iimpawu kunye neenzuzo:
1.Hukunyamezela ubushushu
I-2.I-conductivity ephezulu ye-thermal kunye nokuxhatshazwa kokutshatyalaliswa
I-3.Amandla aphezulu omatshini kunye nokuxhatshazwa kwe-abrasion
4.Ukusebenza kakuhle kwamandla kunye nokumelana nokugqwala
Sibonelela ngomgangatho ophezulu kunye nokuchaneka komatshini we-NSiC amacandelo e-ceramic aqhuba
1.I-Slip casting
2.Ukukhupha
3.Uni Axial Pressing
4.Isostatic Pressing
Idatha yeMathiriyeli
>Ukwakheka kweeKhemikhali | Sic | 75% |
Si3N4 | ≥23% | |
Mahala Si | 0% | |
Ubuninzi bobuninzi (g/cm3) | 2.70~2.80 | |
I-porosity ebonakalayo (%) | 12~15 | |
Goba amandla kuma-20 ℃(MPa) | 180~190 | |
Goba amandla kwi-1200 ℃(MPa) | 207 | |
Goba amandla kwi-1350 ℃(MPa) | 210 | |
Amandla acinezelayo kuma-20 ℃(MPa) | 580 | |
I-Thermal conductivity kwi-1200 ℃(w/mk) | 19.6 | |
I-coefficient yokwandiswa kweThermal kwi-1200 ℃(x 10-6/C) | 4.70 | |
Ukuxhathisa ukothuka kwe-Thermal | Egqwesileyo | |
Max. ubushushu (℃) | 1600 |