Inkcazo
II-Silicon Carbide (SiC) i-Wafer Susceptorsye-MOCVD esuka kwi-semicera yenzelwe iinkqubo ze-epitaxial eziphambili, ezinikezela ukusebenza okuphezulu kuzo zombiniYiyo EpitaxykwayeSiC Epitaxyizicelo. Indlela entsha ye-Semicera iqinisekisa ukuba ezi zixhasi zihlala ixesha elide kwaye zisebenza kakuhle, zibonelela ngozinzo kunye nokuchaneka kwemisebenzi ebalulekileyo yokuvelisa.
Yenzelwe ukuxhasa iimfuno ezintsonkothileyo zeI-MOCVD Susceptoriinkqubo, ezi mveliso zinezinto ezininzi, ziyahambelana nabathwali abafana ne-PSS Etching Carrier, i-ICP Etching Carrier, kunye ne-RTP Carrier. Ukuguquguquka kwabo kubenza bafaneleke kumashishini aphezulu, kuquka abo basebenza naboI-LED EpitaxialI-Susceptor kunye ne-Monocrystalline Silicon.
Ngohlengahlengiso oluninzi, kubandakanywa i-Barrel Susceptor kunye ne-Pancake Susceptor, ezi zixhobo ze-wafer susceptors nazo ziyimfuneko kwicandelo le-photovoltaic, ezixhasa i-Photovoltaic Parts yokuvelisa. Kubavelisi be-semiconductor, ukukwazi ukuphatha i-GaN kwiinkqubo ze-SiC Epitaxy kwenza aba baxhasi baxabiseke kakhulu ekuqinisekiseni umgangatho ophezulu wemveliso kuluhlu olubanzi lwezicelo.
Iimpawu eziphambili
1 .Ukucoceka okuphezulu kwe-SiC egqunywe igraphite
2. Ukumelana nobushushu obuphezulu kunye nokufana kwe-thermal
3. KulungileI-SiC icwecwe ngekristalekwindawo egudileyo
4. Ukuqina okuphezulu ngokuchasene nokucocwa kweekhemikhali
IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:
SiC-CVD | ||
Ukuxinana | (g/cc) | 3.21 |
Amandla e-Flexural | (Mpa) | 470 |
Ukwandiswa kweThermal | (10-6/K) | 4 |
I-Thermal conductivity | (W/mK) | 300 |
Ukupakisha kunye nokuThumela
Ubunakho bokubonelela:
10000 Iqhekeza/Amaqhekeza ngenyanga
UkuPakisha kunye nokuhanjiswa:
Ukupakisha:Ukupakisha okuMgangatho & okuqinileyo
Ingxowa yePoly + Ibhokisi + Ikhathoni + Iphalethi
Izibuko:
Ningbo/Shenzhen/Shanghai
Ixesha lokukhokhela:
Ubuninzi (Amaqhekeza) | 1-1000 | >1000 |
Est. Ixesha(iintsuku) | 30 | Kuza kuthethathethwana |