Inkcazo
Inkampani yethu ibonelelaUkwaleka kweSiCinkqubo yeenkonzo nge-CVD indlela kumphezulu wegraphite, iiseramikhi kunye nezinye izinto, ukuze iigesi ezikhethekileyo eziqulathe ikhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beemolekyuli zeSiC, iimolekyuli ezidiphozithwe phezu komhlaba.iqatyweizinto zokwakha, ukwenza umaleko okhuselayo we-SIC.
Iimpawu zeentloko zeshawari yeSiC zezi zilandelayo:
1. Ukumelana nokubola: Izinto ze-SiC zinokumelana nokugqwesa okugqwesileyo kwaye ziyakwazi ukumelana nokukhukuliseka kolwelo lweekhemikhali ezahlukeneyo kunye nezisombululo, kwaye zilungele iindlela ezahlukeneyo zokusetyenzwa kweekhemikhali kunye neenkqubo zonyango lomphezulu.
2. Uzinzo lobushushu obuphezulu:Imilomo yeSiCinokugcina ukuzinza kwesakhiwo kwiindawo eziphezulu zokushisa kwaye zifanelekile kwizicelo ezifuna unyango oluphezulu lokushisa.
3. Ukutshiza okufanayo:Umbhobho weSiCuyilo lunolawulo oluhle lokutshiza, olunokufikelela ukuhanjiswa kolwelo okufanayo kunye nokuqinisekisa ukuba ulwelo lonyango lugutyungelwe ngokulinganayo kwindawo ekujoliswe kuyo.
4. Ukumelana nokunxiba okuphezulu: Izinto ze-SiC zinobunzima obuphezulu kunye nokuxhatshazwa kokugqoka kwaye ziyakwazi ukumelana nokusetyenziswa kwexesha elide kunye nokukhuhlana.
Iintloko zeshawari ze-SiC zisetyenziswa ngokubanzi kwiinkqubo zonyango lwe-liquid kwimveliso ye-semiconductor, ukusetyenzwa kweekhemikhali, ukugquma komhlaba, i-electroplating kunye namanye amasimi oshishino. Inokubonelela ngeziphumo ezizinzileyo, ezifanayo kunye nezithembekileyo zokutshiza ukuze kuqinisekiswe umgangatho kunye nokuhambelana kokucubungula kunye nonyango.
Iimpawu eziphambili
1. Ukumelana nobushushu obuphezulu be-oxidation:
Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.
2. Ukucoceka okuphezulu: okwenziwe nge-chemical vapour deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.
3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.
4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye nee-reagents eziphilayo.
IiNgcaciso eziphambili ze-CVD-SIC Coating
| Iipropati zeSiC-CVD | ||
| Ulwakhiwo lweCrystal | FCC isigaba β | |
| Ukuxinana | g/cm ³ | 3.21 |
| Ukuqina | Vickers ubulukhuni | 2500 |
| Ubungakanani benkozo | μm | 2~10 |
| Ucoceko lweMichiza | % | 99.99995 |
| Ubushushu Umthamo | J·kg-1 ·K-1 | 640 |
| Ubushushu bokunciphisa | ℃ | 2700 |
| Amandla eFelexural | MPa (RT 4-point) | 415 |
| Imodulus eselula | I-Gpa (4pt bend, 1300℃) | 430 |
| Ukwandiswa kweThermal (CTE) | 10-6K-1 | 4.5 |
| I-Thermal conductivity | (W/mK) | 300 |
