Silicon carbide SiC Shower Head

Inkcazelo emfutshane:

I-Semicera lishishini lobuchwepheshe obuphezulu elibandakanyeka kuphando lwezinto eziphathekayo iminyaka emininzi, kunye neqela elikhokelayo le-R&D kunye ne-R&D edibeneyo kunye nokuveliswa. Nikeza ngokwezifisoI-silicon carbide(SiC）Intloko yeshawari ukuxoxa neengcali zethu zobuchwephesha ukuba ungayifumana njani eyona nkqubo ilungileyo kunye nenzuzo yokuthengisa iimveliso zakho.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Inkcazo

Inkampani yethu ibonelelaUkwaleka kweSiCinkqubo yeenkonzo nge-CVD indlela kumphezulu wegraphite, iiseramikhi kunye nezinye izinto, ukuze iigesi ezikhethekileyo eziqulathe ikhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beemolekyuli zeSiC, iimolekyuli ezidiphozithwe phezu komhlaba.iqatyweizinto zokwakha, ukwenza umaleko okhuselayo we-SIC.

Iimpawu zeentloko zeshawari yeSiC zezi zilandelayo:

1. Ukumelana nokubola: Izinto ze-SiC zinokumelana nokugqwesa okugqwesileyo kwaye ziyakwazi ukumelana nokukhukuliseka kolwelo lweekhemikhali ezahlukeneyo kunye nezisombululo, kwaye zilungele iindlela ezahlukeneyo zokusetyenzwa kweekhemikhali kunye neenkqubo zonyango lomphezulu.

2. Uzinzo lobushushu obuphezulu:Imilomo yeSiCinokugcina ukuzinza kwesakhiwo kwiindawo eziphakamileyo zokushisa kwaye zifanelekile kwizicelo ezifuna unyango oluphezulu lokushisa.

3. Ukutshiza okufanayo:Umbhobho weSiCuyilo lunolawulo oluhle lokutshiza, olunokufikelela ukuhanjiswa kolwelo okufanayo kunye nokuqinisekisa ukuba ulwelo lonyango lugutyungelwe ngokulinganayo kwindawo ekujoliswe kuyo.

4. Ukuxhatshazwa okuphezulu kokugqoka: Izinto ze-SiC zinobunzima obuphezulu kunye nokuxhatshazwa kokugqoka kwaye ziyakwazi ukumelana nokusetyenziswa kwexesha elide kunye nokukhuhlana.

Iintloko zeshawari ze-SiC zisetyenziswa ngokubanzi kwiinkqubo zonyango lwe-liquid kwimveliso ye-semiconductor, ukusetyenzwa kweekhemikhali, ukugquma komhlaba, i-electroplating kunye namanye amasimi oshishino. Inokubonelela ngeziphumo ezizinzileyo, ezifanayo kunye nezithembekileyo zokutshiza ukuze kuqinisekiswe umgangatho kunye nokuhambelana kokucubungula kunye nonyango.

malunga (1)

malunga (2)

Iimpawu eziphambili

1. Ukumelana nobushushu obuphezulu be-oxidation:
Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.
2. Ukucoceka okuphezulu: okwenziwe nge-chemical vapour deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.
3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.
4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye nee-reagents eziphilayo.

IiNgcaciso eziphambili ze-CVD-SIC Coating

Iipropati zeSiC-CVD
Ulwakhiwo lweCrystal	FCC isigaba β
Ukuxinana	g/cm ³	3.21
Ukuqina	Vickers ubulukhuni	2500
Ubungakanani benkozo	μm	2~10
Ucoceko lweMichiza	%	99.99995
Ubushushu Umthamo	J·kg-1 ·K-1	640
Ubushushu bokunciphisa	℃	2700
Amandla eFelexural	MPa (RT 4-point)	415
Imodulus eselula	I-Gpa (4pt bend, 1300℃)	430
Ukwandiswa kweThermal (CTE)	10-6K-1	4.5
I-Thermal conductivity	(W/mK)	300