Izifudumezi zeSilicon Carbide SiC ezigqunyiweyo

ISilicon Carbide SiC Iiheater eziQhutywayo eziFakelweyo Umfanekiso

Inkcazelo emfutshane:

Isifudumezi se-silicon ye-carbide sigqunywe nge-oxide yesinyithi, oko kukuthi, ipeyinti ekude ye-infrared ye-silicon ye-carbide plate njengesixhobo sokutshisa i-radiation, kumngxuma we element (okanye i-groove) kucingo lokufudumeza lombane, emazantsi e-silicon carbide plate ifake ukugqunyelelwa okungqindilili, ukuchasana. , izinto zokufudumeza ukushisa, kwaye emva koko zifakwe kwiqokobhe lensimbi, i-terminal ingasetyenziselwa ukudibanisa umbane.

Xa imitha ye-infrared ekude ye-silicon carbide heater iphuma kwinto, inokufunxa, ibonise kwaye idlule. Izinto ezifudunyeziweyo nezomisiweyo zifunxa amandla emitha ekude kwi-infrared kubunzulu obuthile bangaphakathi kunye neemolekyuli zomhlaba ngaxeshanye, zivelisa umphumo wokuzifudumeza, ukuze i-solvent okanye iimolekyuli zamanzi zibe ngumphunga kwaye zifudumale ngokulinganayo, ngaloo ndlela ukuphepha ukuguquka kunye nokutshintsha komgangatho. ngenxa yeedigri ezahlukeneyo zokwandiswa kwe-thermal, ukwenzela ukuba ukubonakala kwezinto eziphathekayo, izinto eziphathekayo kunye nomatshini, ukukhawuleza kunye nombala kuhlale kuhambelana.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Inkcazo

Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC.

Iimpawu eziphambili

1. Ukumelana nobushushu obuphezulu be-oxidation:
Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.
2. Ukucoceka okuphezulu: okwenziwe nge-chemical vapour deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.
3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.
4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye ne-organic reagents.

IiNgcaciso eziphambili ze-CVD-SIC Coating

Iipropati zeSiC-CVD
Ulwakhiwo lweCrystal	FCC isigaba β
Ukuxinana	g/cm ³	3.21
Ukuqina	Vickers ubulukhuni	2500
Ubungakanani benkozo	μm	2~10
Ucoceko lweMichiza	%	99.99995
Ubushushu Umthamo	J·kg-1 ·K-1	640
Iqondo lobushushu elisezantsi	℃	2700
Amandla eFelexural	MPa (RT 4-point)	415
Imodulus eselula	I-Gpa (4pt bend, 1300℃)	430
Ukwandiswa kweThermal (CTE)	10-6K-1	4.5
I-Thermal conductivity	(W/mK)	300