Inkcazo
Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC.
Iimpawu eziphambili
1 .Ukucoceka okuphezulu kwe-SiC egqunywe igraphite
2. Ukumelana nobushushu obuphezulu kunye nokufana kwe-thermal
3. Ikristale ye-SiC ecocekileyo igqunywe kwindawo egudileyo
4. Ukuqina okuphezulu ngokuchasene nokucocwa kweekhemikhali
IiNgcaciso eziphambili ze-CVD-SIC Coating
| Iipropati zeSiC-CVD | ||
| Ulwakhiwo lweCrystal | FCC isigaba β | |
| Ukuxinana | g/cm ³ | 3.21 |
| Ukuqina | Vickers ubulukhuni | 2500 |
| Ubungakanani benkozo | μm | 2~10 |
| Ucoceko lweMichiza | % | 99.99995 |
| Ubushushu Umthamo | J·kg-1 ·K-1 | 640 |
| Ubushushu bokunciphisa | ℃ | 2700 |
| Amandla eFelexural | MPa (RT 4-point) | 415 |
| Imodulus eselula | I-Gpa (4pt bend, 1300℃) | 430 |
| Ukwandiswa kweThermal (CTE) | 10-6K-1 | 4.5 |
| I-Thermal conductivity | (W/mK) | 300 |
