SemiceraI-Silicon Carbide yeCeramic Coatinglukhuselo olusebenza ngokuphezulu olwenziwe nge-silicon carbide (SiC) enzima kakhulu kwaye inxibe-resistant imathiriyeli. I-coating idla ngokufakwa kumphezulu we-substrate nge-CVD okanye inkqubo ye-PVD ngeamasuntswana e-silicon carbide, Ukubonelela ngokumelana nokugqwesa kweekhemikhali kunye nokuzinza okuphezulu kweqondo lokushisa. Ke ngoko, iSilicon Carbide Ceramic Coating isetyenziswa ngokubanzi kumacandelo aphambili ezixhobo zokuvelisa i-semiconductor.
Kwimveliso ye-semiconductor,Ukwaleka kweSiCinokumelana namaqondo obushushu aphezulu kakhulu ukuya kuthi ga kwi-1600 ° C, ngoko ke i-Silicon Carbide Ceramic Coating isoloko isetyenziswa njengomaleko okhuselayo wezixhobo okanye izixhobo zokuthintela umonakalo kwiqondo lobushushu eliphezulu okanye kwindawo ezonakalisayo.
Ngaxeshanye,i-silicon carbide yokugqoka i-ceramicinokumelana nokukhukuliseka kwe-asidi, i-alkalis, i-oxides kunye nezinye ii-reagents zemichiza, kwaye inokumelana nokugqwala okuphezulu kwizinto ezahlukeneyo zekhemikhali. Ke ngoko, le mveliso ifanelekile kwiindawo ezonakalisayo ezahlukeneyo kwishishini le-semiconductor.
Ngaphezu koko, xa kuthelekiswa nezinye izinto ze-ceramic, i-SiC ine-conductivity ephezulu ye-thermal kwaye inokuqhuba ngokufanelekileyo ubushushu. Olu phawu lumisela ukuba kwiinkqubo ze-semiconductor ezifuna ulawulo oluchanekileyo lobushushu, ukuhanjiswa okuphezulu kwe-thermal.I-Silicon Carbide yeCeramic Coatinginceda ukusabalalisa ubushushu ngokulinganayo, ukuthintela ukushisa kwendawo, kunye nokuqinisekisa ukuba isixhobo sisebenza kwiqondo lobushushu elilungileyo.
| Iimpawu ezibonakalayo ezisisiseko ze-CVD sic coating | |
| Ipropati | Ixabiso eliqhelekileyo |
| Ulwakhiwo lweCrystal | I-FCC β isigaba se-polycrystalline, ikakhulu (i-111) ejoliswe kuyo |
| Ukuxinana | 3.21 g/cm³ |
| Ukuqina | 2500 Vickers ubunzima (500g umthwalo) |
| Khozo SiZe | 2 ~ 10μm |
| Ucoceko lweMichiza | 99.99995% |
| Ubushushu Umthamo | 640 J·kg-1·K-1 |
| Ubushushu bokunciphisa | 2700℃ |
| Amandla e-Flexural | 415 MPa RT 4-inqaku |
| Imodulus eselula | 430 Gpa 4pt bend, 1300℃ |
| I-Thermal Conductivity | 300Wm-1·K-1 |
| Ukwandiswa kweThermal(CTE) | 4.5×10-6K-1 |
