I-Silicon Carbide Disc ye-MOCVD

Silicon Carbide Disc for MOCVD Umfanekiso Featured

Inkcazelo emfutshane:

I-SiC star disc Isicelo: i-SiC iplate yeziko kunye neediski zisetyenziselwa kwigumbi lokuphendula le-MOCVD kwi-III-V yenkqubo ye-semiconductor epitaxial.

Siyakwazi ukuyila kunye nokwenza ngokwemilinganiselo yakho ethile ngomgangatho olungileyo kunye nexesha lokuhambisa elifanelekileyo.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Inkcazo

CVD-SiC ukutyabekaineempawu zesakhiwo esifanayo, i-compact material, ukumelana nobushushu obuphezulu, ukumelana ne-oxidation, ukucoceka okuphezulu, ukuxhathisa kwe-asidi kunye ne-alkali kunye ne-reagent ye-organic, eneempawu ezizinzileyo zomzimba kunye neekhemikhali.

Xa kuthelekiswa nezinto ezicocekileyo zegraphite, i-graphite iqala i-oxidize kwi-400C, eya kubangela ukulahleka kwepowder ngenxa ye-oxidation, okubangelwa ukungcoliseka kwendalo kwizixhobo ze-peripheral kunye namagumbi okucoca, kunye nokwandisa ukungcola kokusingqongileyo okuphezulu.
Nangona kunjalo,Ukwaleka kweSiCinokugcina uzinzo lomzimba kunye neekhemikhali kwii-degrees ze-1600, Isetyenziswa ngokubanzi kumashishini anamhlanje, ngakumbi kwishishini le-semiconductor.

Iimpawu eziphambili

1 .Ukucoceka okuphezulu kwe-SiC egqunywe igraphite

2. Ukumelana nobushushu obuphezulu kunye nokufana kwe-thermal

3. KulungileI-SiC icwecwe ngekristalekwindawo egudileyo

4. Ukuqina okuphezulu ngokuchasene nokucocwa kweekhemikhali

IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:

SiC-CVD
Ukuxinana	(g/cc)	3.21
Amandla e-Flexural	(Mpa)	470
Ukwandiswa kweThermal	(10-6/K)	4
I-Thermal conductivity	(W/mK)	300

Ukupakisha kunye nokuThumela

Ukubonelela ngezakhono:
10000 Iqhekeza/Amaqhekeza ngenyanga
UkuPakisha kunye nokuhanjiswa:
Ukupakisha:Ukupakisha okuMgangatho & okuqinileyo
Ingxowa yePoly + Ibhokisi + Ikhathoni + Ipalethi
Izibuko:
Ningbo/Shenzhen/Shanghai
Ixesha lokukhokhela:

Ubuninzi (Amaqhekeza)	1 - 1000	>1000
Est.Ixesha(iintsuku)	15	Kuza kuthethathethwana

Iprofayile yekhampani

malunga (2)
I-Semicera Energy Technology Co., Ltd. ngumboneleli okhokelayo weeseramics zesemiconductor eziphucukileyo kwaye nguye kuphela umenzi eTshayina okwaziyo ukubonelela ngeeseramikhi zesilicone carbide ezicoceke kakhulu (ingakumbi isilicon carbide ehlaziyiweyo) kunyeIingubo ze-silicon carbide zeCVD.Ukongeza, inkampani izibophelele kwi-alumina, i-aluminium nitride, i-zirconia, i-silicon nitride kunye namanye amasimi e-ceramic.

Iimveliso zethu eziphambili ziquka: iipleyiti ze-silicon carbide etch, iinqwelwana ze-silicon carbide boat,izikhephe ze-silicon carbide wafer(PV & Semiconductor), i-silicon carbide furnace tubes,i-silicon carbide cantilever paddles, i-silicon carbide chucks, i-silicon carbide beams, kunye neengubo ze-CVD SiC kunye neengubo ze-TaC.Iimveliso zisetyenziswa kakhulu kwi-semiconductor kunye namashishini e-photovoltaic, afana nokukhula kwekristale, i-epitaxy, i-etching, ukupakishwa, ukugubungela kunye nezixhobo zokushisa ezivuthayo.

Inkampani inokwakheka, i-sintering, iprosesa, izixhobo zokupeyinta kunye nezinye izixhobo ezipheleleyo zokuvelisa, inokugqiba zonke iikhonkco eziyimfuneko zokuvelisa imveliso, umgangatho wemveliso unokulawulwa okuphezulu;Isicwangciso esilungileyo sokuvelisa sinokukhethwa ngokweemfuno zemveliso, ngoko ukunciphisa iindleko kunye nokubonelela abathengi ngeemveliso ezikhuphisanayo;Singacwangcisa imveliso ngokuguquguqukayo nangokufanelekileyo ngokweemfuno zokuhanjiswa kweodolo, kudityaniswe nenkqubo yolawulo lwe-intanethi, ukubonelela abathengi ngokukhawuleza nangokukhuselekileyo kokuhanjiswa.
malunga (2)

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