Isikhephe seSilicon carbide

Inkcazelo emfutshane:

ISemicera Energy Technology Co., Ltd. ngumboneleli ohamba phambili weeseramics zesemiconductor eziphucukileyo kwaye nguye kuphela umenzi eTshayina onokunika ngaxeshanye ukucoceka okuphezulu kwesilicon carbide ceramic (ingakumbiRecrystallized SiC) kunye neCVD SiC coating.Ukongeza, inkampani yethu izibophelele kumasimi e-ceramic afana ne-alumina, i-aluminium nitride, i-zirconia, kunye ne-silicon nitride, njl.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iimpawu zeMveliso yeSiC

Ubushushu obuphezulu kunye nokumelana nomhlwa, ukuphucula umgangatho we-wafer kunye nemveliso

I-SiC ibhekisa kwi-silicon carbide.I-Silicon carbide (i-SiC) yenziwe ngesanti ye-quartz, i-coke kunye nezinye izinto eziluhlaza ngokusebenzisa ukunyibilika kwesithando somlilo esiphezulu.Imveliso yangoku ye-silicon carbide ineendidi ezimbini, i-silicon carbide emnyama kunye ne-silicon carbide eluhlaza.Zombini ziyi-crystal ene-hexagonal, ubunzima obuthile be-3.21g / cm3, ubunzima obuncinci be-2840 ~ 3320kg / mm2.

Ubuncinci iindidi ezingama-70 ze-crystalline silicon carbide, ngenxa yobunzima bayo obuphantsi obuyi-3.21g/cm3 kunye namandla obushushu obuphezulu, ilungele iibheringi okanye izixhobo ezikrwada zesithando somlilo.nakweyiphi na ingcinezelo ayinakufikelelwa, kwaye ibe nomsebenzi omninzi wekhemikhali ophantsi.

Kwangaxeshanye, abantu abaninzi baye bazama ukutshintsha i-silicon nge-silicon carbide ngenxa ye-conductivity ephezulu ye-thermal, amandla ombane otyumkileyo kunye nobuninzi obuphezulu bangoku.Kutshanje, ekusetyenzisweni kwezixhobo zamandla aphezulu e-semiconductor.Ngapha koko, i-silicon carbide substrate kwi-thermal conductivity, ngaphezulu kwamaxesha ali-10 ngaphezulu kwesapphire substrate, ngoko ke ukusetyenziswa kwe-silicon carbide substrate amacandelo e-LED, kunye ne-conductivity entle kunye ne-thermal conductivity, ehambelana nokuveliswa kwamandla aphezulu e-LED.