Ingcaciso yeMveliso
4h-n 4inch 6inch dia100mm sic seed wafer 1mm ubukhulu bokukhula kweingot
Ubungakanani obulungiselelweyo/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/Ubunyulu obuphezulu 4H-N 4inch 6inch dia 150mm isilicon carbide enye icrystal (sic) substrates wafersS/ Customzied as-cut sic wafersImveliso 4 ibakala 4H-N 1.5mm SIC Wafers ukwenzela crystal imbewu
Malunga neSilicon Carbide (SiC)Crystal
I-Silicon carbide (i-SiC), eyaziwa ngokuba yi-carborundum, i-semiconductor equkethe i-silicon kunye ne-carbon ene-chemical formula SiC. I-SiC isetyenziswa kwizixhobo ze-elektroniki ze-semiconductor ezisebenza kumaqondo obushushu aphezulu okanye amandla ombane aphezulu, okanye zombini.I-SiC ikwayenye yezinto ezibalulekileyo ze-LED, iyindawo esezantsi ethandwayo yokukhulisa izixhobo ze-GaN, kwaye ikwasebenza njengesasazi sobushushu kwindawo ephezulu- ii-LEDs zamandla.
Inkcazo
| Ipropati | I-4H-SiC, iCrystal enye | I-6H-SiC, iCrystal enye |
| Iiparamitha zeLattice | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Ulandelelwano lokupakisha | ABCB | ABCACB |
| Mohs Ubunzima | ≈9.2 | ≈9.2 |
| Ukuxinana | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm. Ukwandiswa kwe-Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index @750nm | hayi = 2.61 | hayi = 2.60 |
| Dielectric Constant | c~9.66 | c~9.66 |
| I-Thermal Conductivity (uhlobo lwe-N, 0.02 ohm.cm) | a ~ 4.2 W/cm·K@298K |
|
| I-Thermal Conductivity (iSemi-insulating) | a~4.9 W/cm·K@298K | a ~ 4.6 W/cm·K@298K |
| Band-umsantsa | 3.23 eV | 3.02 eV |
| Ukuqhekeka-kwiNdawo yoMbane | 3-5 × 106V / cm | 3-5 × 106V / cm |
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
