IGraphite Susceptor eneSilicon Carbide Coating Wafer Carrier

Inkcazelo emfutshane:

I-Semicera inikezela ngoluhlu olubanzi lwee-susceptors kunye nezixhobo zegraphite ezenzelwe ii-epitaxy reactors ezahlukeneyo.

Ngobudlelwane obucwangcisiweyo kunye nee-OEM ezikhokelayo kwishishini, ubuchwephesha bezinto ezininzi, kunye nobuchule obuphambili bokuvelisa, iSemicera ihambisa uyilo olulungiselelwe ukuhlangabezana neemfuno ezithile zesicelo sakho. Ukuzibophelela kwethu ekugqweseni kuqinisekisa ukuba ufumana izisombululo ezizezona zifanelekileyo kwiimfuno zakho ze-epitaxy reactor.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Inkcazo

I-CVD-SiC yokwambathisa ineempawu zesakhiwo esifanayo, izinto ezihlangeneyo, ukumelana nobushushu obuphezulu, ukumelana ne-oxidation, ukucoceka okuphezulu, ukuxhathisa kwe-asidi kunye ne-alkali kunye ne-reagent ye-organic, eneempawu ezizinzileyo zomzimba kunye neekhemikhali.
Xa kuthelekiswa nezinto ezicocekileyo zegraphite, i-graphite iqala i-oxidize kwi-400C, eya kubangela ukulahleka kwepowder ngenxa ye-oxidation, okubangelwa ukungcoliseka kwendalo kwizixhobo ze-peripheral kunye namagumbi okucoca, kunye nokwandisa ukungcola kokusingqongileyo okuphezulu.
Nangona kunjalo, ukugquma kwe-SiC kunokugcina uzinzo ngokwasemzimbeni kunye neekhemikhali kwii-degrees ze-1600, Isetyenziswa kakhulu kumashishini anamhlanje, ngakumbi kwishishini le-semiconductor.

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Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC. I-SIC eyenziwe idityaniswe ngokuqinileyo kwisiseko segraphite, inika isiseko segraphite iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu we-graphite compact, i-Porosity-free, ukumelana nobushushu obuphezulu, ukuxhathisa kwe-corrosion kunye nokumelana ne-oxidation.

Isicelo

Iimpawu eziphambili

1 .Ukucoceka okuphezulu kwe-SiC egqunywe igraphite

2. Ukumelana nobushushu obuphezulu kunye nokufana kwe-thermal

3. Ikristale ye-SiC ecocekileyo igqunywe kwindawo egudileyo

4. Ukuqina okuphezulu ngokuchasene nokucocwa kweekhemikhali

IiNgcaciso eziphambili ze-CVD-SIC Coatings

SiC-CVD
Ukuxinana	(g/cc)	3.21
Amandla e-Flexural	(Mpa)	470
Ukwandiswa kweThermal	(10-6/K)	4
I-Thermal conductivity	(W/mK)	300

Ukupakisha kunye nokuThumela

Ubunakho bokubonelela:
10000 Iqhekeza/Amaqhekeza ngenyanga
UkuPakisha kunye nokuhanjiswa:
Ukupakisha:Ukupakisha okuMgangatho & okuqinileyo
Ingxowa yePoly + Ibhokisi + Ikhathoni + Iphalethi
Izibuko:
Ningbo/Shenzhen/Shanghai
Ixesha lokukhokhela: