Inkqubo eqatywe iSiC yesiseko segraphite SiC Coated Graphite Carriers

Inkcazelo emfutshane:

I-Semicera Energy Technology Co., Ltd. ngumboneleli ohamba phambili weeseramics ze-semiconductor eziphambili. Iimveliso zethu eziphambili ziquka: ii-silicon carbide etched discs, ii-silicon carbide boat trailers, ii-silicon carbide wafer ships (PV & Semiconductor), iityhubhu ze-silicon carbide furnace, i-silicon carbide cantilever paddles, i-silicon carbide chuck, i-silicon carbide beams, kunye ne-CVD coating kunye ne-SiC. Iingubo ze-TaC.
Iimveliso zisetyenziswa kakhulu kwi-semiconductor kunye namashishini e-photovoltaic, afana nokukhula kwekristale, i-epitaxy, i-etching, ukupakishwa, ukugubungela kunye nezixhobo zokushisa ezivuthayo.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Inkcazo

Sigcina ukunyamezelana okusondele kakhulu xa sifaka isiceloUkwaleka kweSiC, usebenzisa i-high-precision machining ukuqinisekisa iprofayili ye-susceptor efanayo. Siphinda sivelise izixhobo ezineempawu ezifanelekileyo zokuxhathisa umbane ukuze zisetyenziswe kwiinkqubo ezitshisayo. Onke amacandelo agqityiweyo aza kunye nesatifikethi sokuthotyelwa kobunyulu kunye nobukhulu.

Inkampani yethu ibonelelaUkwaleka kweSiCinkqubo yeenkonzo nge-CVD indlela kumphezulu wegraphite, iiseramikhi kunye nezinye izinto, ukuze iigesi ezikhethekileyo eziqulathe carbon kunye nesilicon basabela kubushushu obuphezulu ukufumana iimolekyuli eziphakamileyo ze-SiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunywe, zenza i-SIC yokukhusela. I-SIC eyenziwe idityaniswe ngokuqinileyo kwisiseko segraphite, inika isiseko segraphite iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu we-graphite compact, i-Porosity-free, ukumelana nobushushu obuphezulu, ukuxhathisa kwe-corrosion kunye nokumelana ne-oxidation.

gf (1)

Inkqubo ye-CVD inikezela ubunyulu obuphezulu kakhulu kunye noxinaniso lwethiyoriUkwaleka kweSiCngaphandle kwe-porosity. Ngaphezu koko, njengoko i-silicon carbide inzima kakhulu, inokugudiswa kwindawo efana nesipili.I-CVD silicon carbide (SiC) yokugqumainikezele ngezinto ezininzi eziluncedo ezibandakanya ubunyulu obuphezulu kunye nokuqina kokunxiba. Njengoko iimveliso ezigqunyiweyo zisebenza kakuhle kwi-vacuum ephezulu kunye neemeko zobushushu obuphezulu, zilungele usetyenziso kwishishini le-semiconductor kunye nenye indawo ecocekileyo kakhulu. Sikwabonelela ngeemveliso zepyrolytic graphite (PG).

Iimpawu eziphambili

1. Ukumelana nobushushu obuphezulu be-oxidation:
Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.
2. Ukucoceka okuphezulu: okwenziwe nge-chemical vapour deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.
3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.
4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye nee-reagents eziphilayo.

Eyona-05

Eyona-04

Eyona-03

IiNgcaciso eziphambili ze-CVD-SIC Coatings

SiC-CVD
Ukuxinana	(g/cc)	3.21
Amandla e-Flexural	(Mpa)	470
Ukwandiswa kweThermal	(10-6/K)	4
I-Thermal conductivity	(W/mK)	300

Isicelo

I-CVD silicon carbide coating sele isetyenzisiwe kumashishini esemiconductor esele ifakiwe, njenge-MOCVD tray, RTP kunye ne-oxide etching chamber ekubeni i-silicon nitride inoxhathiso olukhulu lobushushu kwaye inokumelana neplasma yamandla aphezulu.
-I-Silicon carbide isetyenziswa ngokubanzi kwi-semiconductor kunye nokugqoka.

Isicelo

Ubunakho bokubonelela:
10000 Iqhekeza/Amaqhekeza ngenyanga
UkuPakisha kunye nokuhanjiswa:
Ukupakisha:Ukupakisha okuMgangatho & okuqinileyo
Ingxowa yePoly + Ibhokisi + Ikhathoni + Iphalethi
Izibuko:
Ningbo/Shenzhen/Shanghai
Ixesha lokukhokhela: