I-Graphite Susceptor ene-Silicon Carbide Coating, iziqwenga ezi-6 ze-6 intshi ye-wafer Carrier

I-Graphite Susceptor ene-Silicon Carbide Coating, iziqwenga ezi-6 ze-intshi ezi-6 zeWafer

Inkcazelo emfutshane:

I-Semicera Energy inikezela ngoluhlu olubanzi lwee-susceptors kunye nezixhobo zegraphite ezenzelwe i-epitaxy reactors ezahlukeneyo.

Ngobudlelwane obucwangcisiweyo kunye nee-OEM ezikhokelayo kushishino, ubuchwephesha bezinto ezininzi, kunye nobuchule obuphambili bokuvelisa, iSemicera Energy ihambisa uyilo olulungiselelwe ukuhlangabezana neemfuno ezithile zesicelo sakho.Ukuzibophelela kwethu ekugqweseni kuqinisekisa ukuba ufumana izisombululo ezizezona zifanelekileyo kwiimfuno zakho ze-epitaxy reactor.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Inkcazo

CVD-SiC ukutyabekaineempawu zesakhiwo esifanayo, i-compact material, ukumelana nobushushu obuphezulu, ukumelana ne-oxidation, ukucoceka okuphezulu, ukuxhathisa kwe-asidi kunye ne-alkali kunye ne-reagent ye-organic, eneempawu ezizinzileyo zomzimba kunye neekhemikhali.

Xa kuthelekiswa nezinto ezicocekileyo zegraphite, i-graphite iqala i-oxidize kwi-400C, eya kubangela ukulahleka kwepowder ngenxa ye-oxidation, okubangelwa ukungcoliseka kwendalo kwizixhobo ze-peripheral kunye namagumbi okucoca, kunye nokwandisa ukungcola kokusingqongileyo okuphezulu.
Nangona kunjalo,Ukwaleka kweSiCinokugcina uzinzo lomzimba kunye neekhemikhali kwii-degrees ze-1600, Isetyenziswa ngokubanzi kumashishini anamhlanje, ngakumbi kwishishini le-semiconductor.

Iimpawu eziphambili

1 .Ukucoceka okuphezulu kwe-SiC egqunywe igraphite

2. Ukumelana nobushushu obuphezulu kunye nokufana kwe-thermal

3. Ikristale ye-SiC ecocekileyo igqunywe kwindawo egudileyo

4. Ukuqina okuphezulu ngokuchasene nokucocwa kweekhemikhali

IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:

SiC-CVD
Ukuxinana	(g/cc)	3.21
Amandla e-Flexural	(Mpa)	470
Ukwandiswa kweThermal	(10-6/K)	4
I-Thermal conductivity	(W/mK)	300

Ukupakisha kunye nokuThumela

Ukubonelela ngezakhono:
10000 Iqhekeza/Amaqhekeza ngenyanga
UkuPakisha kunye nokuhanjiswa:
Ukupakisha:Ukupakisha okuMgangatho & okuqinileyo
Ingxowa yePoly + Ibhokisi + Ikhathoni + Ipalethi
Izibuko:
Ningbo/Shenzhen/Shanghai
Ixesha lokukhokhela:

Ubuninzi (Amaqhekeza)	1 - 1000	>1000
Est.Ixesha(iintsuku)	15	Kuza kuthethathethwana

Iprofayile yekhampani

malunga (2)
I-Semicera Energy Technology Co., Ltd. ngumboneleli ohamba phambili weeseramics zesemiconductor eziphucukileyo kwaye nguye kuphela umenzi e-China okwaziyo ukubonelela ngeeseramikhi ze-silicon carbide ezicoceke kakhulu (ingakumbi i-silicon carbide ehlaziyiweyo) kunye ne-CVD silicon carbide yokwambathisa.Ukongeza, inkampani izibophelele kwi-alumina, i-aluminium nitride, i-zirconia, i-silicon nitride kunye namanye amasimi e-ceramic.

Iimveliso zethu eziphambili ziquka: iipleyiti ze-silicon carbide etch, iinqwelwana ze-silicon carbide boat,izikhephe ze-silicon carbide wafer(PV & Semiconductor), i-silicon carbide furnace tubes,i-silicon carbide cantilever paddles, i-silicon carbide chucks, i-silicon carbide beams, ngokunjaloIingubo ze-CVD SiCkunye neeteyiphu zeTaC.Iimveliso zisetyenziswa kakhulu kwi-semiconductor kunye namashishini e-photovoltaic, afana nokukhula kwekristale, i-epitaxy, i-etching, ukupakishwa, ukugubungela kunye nezixhobo zokushisa ezivuthayo.

Inkampani inokwakheka, i-sintering, iprosesa, izixhobo zokupeyinta kunye nezinye izixhobo ezipheleleyo zokuvelisa, inokugqiba zonke iikhonkco eziyimfuneko zokuvelisa imveliso, umgangatho wemveliso unokulawulwa okuphezulu;Isicwangciso esilungileyo sokuvelisa sinokukhethwa ngokweemfuno zemveliso, ngoko ukunciphisa iindleko kunye nokubonelela abathengi ngeemveliso ezikhuphisanayo;Singacwangcisa imveliso ngokuguquguqukayo nangokufanelekileyo ngokweemfuno zokuhanjiswa kweodolo, kudityaniswe nenkqubo yolawulo lwe-intanethi, ukubonelela abathengi ngokukhawuleza nangokukhuselekileyo kokuhanjiswa.
malunga (2)

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