Inkcazo
SiC Coated Graphite Base Susceptorsye-MOCVD esuka kwi-semicera zenzelwe ukubonelela ngentsebenzo ekhethekileyo kwiinkqubo zokukhula kwe-epitaxial. Umgangatho ophezulu we-silicon carbide coating kwisiseko segraphite siqinisekisa ukuzinza, ukuqina, kunye nomgangatho ophezulu we-thermal conductivity ngexesha le-MOCVD (i-Metal Organic Chemical Vapor Deposition) imisebenzi. Ngokusebenzisa itekhnoloji ye-susceptor ye-semicera, unokufezekisa ukuchaneka okuphuculweyo kunye nokusebenza kakuhleYiyo EpitaxykwayeSiC Epitaxyizicelo.
EziI-MOCVD Susceptorsziyilelwe ukuxhasa uluhlu lwamacandelo e-semiconductor ayimfuneko, anjengePSS Etching Carrier, I-ICP Etching Carrier, kwayeUmthwali we-RTP, ibenza ukuba baguquguquke kwimisebenzi eyahlukeneyo ye-etching kunye ne-epitaxial. Ukuzibophelela kweSemicera kwimigangatho ephezulu kuqinisekisa ukuba aba baxhaphazi bahlangabezana neemfuno eziqatha zemveliso yanamhlanje ye-semiconductor.
Ilungele ukusetyenziswa kwiI-LED EpitaxialI-Susceptor, i-Barrel Susceptor, kunye ne-Monocrystalline Silicon iinkqubo, ezi zixhasi ziyakwazi ukulungelelaniswa nobukhulu obuhlukeneyo be-wafer, kuquka i-Pancake Susceptor configuration. Zikwasebenza kakuhle kakhulu ekuphatheni iiNdawo zePhotovoltaic, zizenza zibe yinxalenye ebalulekileyo kuphuhliso lweeseli zelanga ezisebenzayo.
Ukongeza, i-SiC Coated Graphite Base Susceptors ye-MOCVD ilungiselelwe i-GaN kwi-SiC Epitaxy, inikezela ukuhambelana okuphezulu kunye nezixhobo eziphambili ze-semiconductor. Nokuba ugxile ekuphuculeni izivuno okanye ekuphuculeni umgangatho wokukhula kwe-epitaxial, abaxhathisi be-semicera babonelela ngokuthembeka kunye nokusebenza okufunekayo ukuze uphumelele kumashishini aphezulu.
Iimpawu eziphambili
1 .Ukucoceka okuphezulu kwe-SiC egqunywe igraphite
2. Ukumelana nobushushu obuphezulu kunye nokufana kwe-thermal
3. KulungileI-SiC icwecwe ngekristalekwindawo egudileyo
4. Ukuqina okuphezulu ngokuchasene nokucocwa kweekhemikhali
IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:
| SiC-CVD | ||
| Ukuxinana | (g/cc) | 3.21 |
| Amandla e-Flexural | (Mpa) | 470 |
| Ukwandiswa kweThermal | (10-6/K) | 4 |
| I-Thermal conductivity | (W/mK) | 300 |
Ukupakisha kunye nokuThumela
Ubunakho bokubonelela:
10000 Iqhekeza/Amaqhekeza ngenyanga
UkuPakisha kunye nokuhanjiswa:
Ukupakisha:Ukupakisha okuMgangatho & okuqinileyo
Ingxowa yePoly + Ibhokisi + Ikhathoni + Iphalethi
Izibuko:
Ningbo/Shenzhen/Shanghai
Ixesha lokukhokhela:
| Ubuninzi (Amaqhekeza) | 1-1000 | >1000 |
| Est. Ixesha(iintsuku) | 30 | Kuza kuthethathethwana |
