IiSemicera'sIipaddles zeSiCzenzelwe ukwandiswa okuncinci kwe-thermal, ukubonelela uzinzo kunye nokuchaneka kwiinkqubo apho ukuchaneka komda kubalulekile. Oku kubenza balungele izicelo aphoamaqebengwanaziphantsi kwemijikelo yokufudumeza kunye nokupholisa ngokuphindaphindiweyo, njengoko isikhephe esisicaba sigcina ingqibelelo yesakhiwo, siqinisekisa ukusebenza okungaguqukiyo.
Ukubandakanya iSemicera'si-silicon carbide diffusion paddleskumgca wakho wemveliso kuya kwandisa ukuthembeka kwenkqubo yakho, ngenxa yeempawu zabo eziphezulu zokushisa kunye neekhemikhali. La maphini okubheqa alungele ukusasazwa, i-oxidation, kunye neenkqubo zokubopha, ukuqinisekisa ukuba iiwafa ziphathwa ngononophelo kunye ngokuchanekileyo kwinyathelo ngalinye.
Ukwenziwa kwezinto ezintsha kusembindini weSemicera'sI-SiC ipaddleuyilo. La maphini okubheqa alungelelaniswe ukuba alingane ngokungenamthungo kwisixhobo se-semiconductor esele ikho, ebonelela ngobuchule bokuphatha obuphuculweyo. Ubume obukhaphukhaphu kunye noyilo lwe-ergonomic aluphuculi kuphela ukuthuthwa kwe-wafer kodwa lunciphisa ixesha lokuphumla, okukhokelela kwimveliso elungelelanisiweyo.
| Iimpawu ezibonakalayo zeRecrystallized Silicon Carbide | |
| Ipropati | Ixabiso eliqhelekileyo |
| Ubushushu bokusebenza (°C) | 1600°C (neoksijini), 1700°C (ukunciphisa okusingqongileyo) |
| Umxholo weSiC | > 99.96% |
| Isiqulatho sasimahla Si | < 0.1% |
| Unizi lolwapho kuyiwa khona | 2.60-2.70 g / cm3 |
| I-porosity ebonakalayo | < 16% |
| Amandla oxinzelelo | > 600 MPa |
| Amandla okugoba okubandayo | 80-90 MPa (20°C) |
| Amandla okugoba ashushu | 90-100 MPa (1400°C) |
| Ukwandiswa kweThermal @1500°C | 4.70 10-6/°C |
| I-Thermal conductivity @1200°C | 23 W/m•K |
| Imodyuli ye-elastic | 240 GPA |
| Ukuxhathisa ukothuka kwe-Thermal | Ulunge kakhulu |
