SiC Bonded Si3N4 Refractory Brick

$SiC Bonded Si3N4 Isitena esiRefractory oboniswayo$

$SiC Bonded Si3N4 Refractory Brick$

Inkcazelo emfutshane:

I-Semicera Energy Technology Co., Ltd. ngumboneleli okhokelayo okhethekileyo kwi-wafer kunye ne-semiconductor consumables ephezulu.Sizinikezele ekunikezeni umgangatho ophezulu, othembekileyo, kunye neemveliso ezintsha kwimveliso ye-semiconductor,imboni ye-photovoltaickunye neminye imimandla enxulumeneyo.

Umgca wethu wemveliso uquka i-SiC/TaC egqunywe ngeemveliso zegraphite kunye neemveliso ze-ceramic, ezibandakanya izinto ezahlukeneyo ezifana ne-silicon carbide, i-silicon nitride, kunye ne-aluminium oxide kunye nokunye.

Njengomthengisi othembekileyo, siyakuqonda ukubaluleka kwezinto ezisetyenziswayo kwinkqubo yokwenziwa kwemveliso, kwaye sizimisele ukuhambisa iimveliso ezihlangabezana nemigangatho ephezulu yomgangatho wokuzalisekisa iimfuno zabathengi bethu.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Silicon nitride idityaniswe ne-silicon carbide kiln ineempawu zamandla obushushu obuphezulu, ukuxhathisa ukothuka kwe-thermal, ukuguqulwa okulula, ukuxhathisa i-oxidation, ukumelana nokugqwala, ukuhanjiswa kakuhle kwe-thermal njalo njalo.

Iimpawu eziphambili zokusebenza

Into	Isalathiso sezitena zomlilo	Inkcazo yeKiln	Isalathiso semveliso emile
I-porosity ebonakalayo(%）	<16	<16	<14
Unizi lolwapho kuyiwa khona(g/cm3）	2 2.65	2 2.65	2 2.68
Amandla oxinzelelo kwiqondo lokushisa(MPa）	2 160	2 170	2 180
Ukugoba amandla kwiqondo lobushushu begumbi(1400X:） MPa	2 40	2 45	2 45
Amandla okugoba ubushushu obuphezulu(1400r） MPa	2 50	2 50	2 50
I-Coefficient yokwandiswa kwe-thermal(110CTC）xioVC	<4.18	<4.18	<4.18
I-Thermal conductivity(1100C）	216	2 16	216
IiRefractories(°C ）	1800	1800	1800
0.2 MPa Ukushisa okuthambisayo phantsi komthwalo(X:)	1600	1600	> 1700
Ubushushu bokusebenza okuphezulu(°C）	1550	1550	1550

Iimveliso zisetyenziswa kakhulu kwiceramic yokusila ivili, iimveliso ze-aluminium ephezulu, ibhola ye-aluminium porcelain, i-kiln ye-industrial, i-ceramic yombane, i-porcelain yombane ephezulu yombane, i-sanitary ware, i-porcelain yemihla ngemihla, i-nitride alloy kunye neeseramics zogwebu kunye namanye amashishini.

Ukuxhatshazwa kwempahla ye-Si3N4-SiC ngamaxesha angama-3.13 yentsimbi engaguqukiyo (Crl5Mo3), kwaye ubunzima buyi-1/3 kuphela yentsimbi engagungqiyo (Crl5Mo3).

Amaxabiso okunciphisa umgangatho wokumelana nokubola kwe-Si3N4-SiC kunye ne-calcium carbide kunye ne-alumina kwizisombululo ezahlukeneyo zilandelayo:

Isisombululo sovavanyo	Ubushushu ("C)	I-Si3N4-SiC	Iiseramics eziqhelekileyo	I-aluminium carbide	I-aluminiyam oxide
98%Iasidi yesulfuric	100	1.8	55.0	> 1000	65,0
50%I-sodium hydroxide	100	2,5	> 1000	5.0	75.0
53%Hydrofluoric acid	25	< 0.2	7.9	8.0	20,0
85%Phosphoric acid	100	< 0.2	8.8	55.0	> 1000
70%I-asidi ye-nitric	100	< 0.2	0.5	> 1000	7,0
45 %Potassium hydroxide	100	< 0.2	> 1000	3.0	60,0
25%Hydrochloric acid	70	< 0.2	0.9	85.0	72,0
I-10% ye-Hydrofluoric acid + i-57% ye-Nitric acid	25	< 0.2	> 1000	> 1000	16,0