SiC Bonded Si3N4 Refractory Brick

Inkcazelo emfutshane:

I-Semicera Energy Technology Co., Ltd. ngumboneleli okhokelayo okhethekileyo kwi-wafer kunye ne-semiconductor consumables ephezulu.Sizinikezele ekunikezeni umgangatho ophezulu, othembekileyo, kunye neemveliso ezintsha kwimveliso ye-semiconductor,imboni ye-photovoltaickunye neminye imimandla enxulumeneyo.

Umgca wethu wemveliso uquka i-SiC/TaC egqunywe ngeemveliso zegraphite kunye neemveliso ze-ceramic, ezibandakanya izinto ezahlukeneyo ezifana ne-silicon carbide, i-silicon nitride, kunye ne-aluminium oxide kunye nokunye.

Njengomthengisi othembekileyo, siyakuqonda ukubaluleka kwezinto ezisetyenziswayo kwinkqubo yokwenziwa kwemveliso, kwaye sizimisele ukuhambisa iimveliso ezihlangabezana nemigangatho ephezulu yomgangatho wokuzalisekisa iimfuno zabathengi bethu.

 

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Silicon nitride idityaniswe ne-silicon carbide kiln ineempawu zamandla obushushu obuphezulu, ukuxhathisa ukothuka kwe-thermal, ukuguqulwa okulula, ukuxhathisa i-oxidation, ukumelana nokugqwala, ukuhanjiswa kakuhle kwe-thermal njalo njalo.

Isitena esiNxulutywayo (4)

Iimpawu eziphambili zokusebenza

Into

Isalathiso sezitena zomlilo

Inkcazo yeKiln

Isalathiso semveliso emile

I-porosity ebonakalayo(%

<16

<16

<14

Unizi lolwapho kuyiwa khona(g/cm3

2 2.65

2 2.65

2 2.68

Amandla oxinzelelo kwiqondo lokushisa(MPa

2 160

2 170

2 180

Ukugoba amandla kwiqondo lobushushu begumbi(1400X: MPa

2 40

2 45

2 45

Amandla okugoba ubushushu obuphezulu(1400r MPa

2 50

2 50

2 50

I-Coefficient yokwandiswa kwe-thermal(110CTCxioVC

<4.18

<4.18

<4.18

I-Thermal conductivity(1100C

216

2 16

216

IiRefractories(°C

1800

1800

1800

0.2 MPa Ukushisa okuthambisayo phantsi komthwalo(X:)

1600

1600

> 1700

Ubushushu bokusebenza okuphezulu(°C

1550

1550

1550

Iimveliso zisetyenziswa kakhulu kwiceramic yokusila ivili, iimveliso ze-aluminium ephezulu, ibhola ye-aluminium porcelain, i-kiln ye-industrial, i-ceramic yombane, i-porcelain yombane ephezulu yombane, i-sanitary ware, i-porcelain yemihla ngemihla, i-nitride alloy kunye neeseramics zogwebu kunye namanye amashishini.

Ukuxhatshazwa kwempahla ye-Si3N4-SiC ngamaxesha angama-3.13 yentsimbi engaguqukiyo (Crl5Mo3), kwaye ubunzima buyi-1/3 kuphela yentsimbi engagungqiyo (Crl5Mo3).

Amaxabiso okunciphisa umgangatho wokumelana nokubola kwe-Si3N4-SiC kunye ne-calcium carbide kunye ne-alumina kwizisombululo ezahlukeneyo zilandelayo:

Isisombululo sovavanyo

Ubushushu ("C)

I-Si3N4-SiC

Iiseramics eziqhelekileyo

I-aluminium carbide

I-aluminiyam oxide

98%Iasidi yesulfuric

100

1.8

55.0

> 1000

65,0

50%I-sodium hydroxide

100

2,5

> 1000

5.0

75.0

53%Hydrofluoric acid

25

< 0.2

7.9

8.0

20,0

85%Phosphoric acid

100

< 0.2

8.8

55.0

> 1000

70%I-asidi ye-nitric

100

< 0.2

0.5

> 1000

7,0

45 %Potassium hydroxide

100

< 0.2

> 1000

3.0

60,0

25%Hydrochloric acid

70

< 0.2

0.9

85.0

72,0

I-10% ye-Hydrofluoric acid + i-57% ye-Nitric acid

 

25

< 0.2

> 1000

> 1000

16,0

Ifanitshala yeKiln (7)

Semicera Indawo yokusebenzela Indawo yokusebenza yeSemicera 2 Umatshini wezixhobo Ukucutshungulwa kwe-CNN, ukucocwa kweekhemikhali, ukugquma kwe-CVD Inkonzo yethu


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