I-P-uhlobo lwe-SiC Substrate Wafer

Inkcazelo emfutshane:

I-Semicera's P-uhlobo lwe-SiC Substrate Wafer yenzelwe usetyenziso oluphezulu lwe-elektroniki kunye ne-optoelectronic. Ezi ziqwenga zibonelela nge-conductivity ekhethekileyo kunye nokuzinza kwe-thermal, ezenza zilungele izixhobo zokusebenza eziphezulu. Nge-Semicera, lindela ukuchaneka kunye nokuthembeka kwi-P-uhlobo lwe-SiC substrate wafers.


Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Semicera's P-uhlobo lwe-SiC Substrate Wafer yinxalenye ephambili yokuphuhlisa izixhobo zombane kunye ne-optoelectronic. Ezi wafers ziyilelwe ngokukodwa ukubonelela ukusebenza okongeziweyo kumandla aphezulu kunye nobushushu obuphezulu, ukuxhasa imfuno ekhulayo yezinto ezisebenzayo nezizinzileyo.

I-P-type doping kwii-wafers zethu ze-SiC iqinisekisa ukuphuculwa kombane kunye nokuhamba kwe-carrier carrier. Oku kubenza bafaneleke ngokukodwa kwizicelo kumandla ombane, ii-LED, kunye neeseli ze-photovoltaic, apho ukulahlekelwa kwamandla aphantsi kunye nokusebenza okuphezulu kubaluleke kakhulu.

Yenziwe ngeyona migangatho iphezulu yokuchaneka kunye nomgangatho, ii-wafers ze-SiC zohlobo lwe-Semicera zibonelela ngokufana komphezulu okugqwesileyo kunye namazinga amancinci anesiphene. Ezi mpawu zibalulekile kumashishini apho ukungaguquguquki kunye nokuthembeka kubalulekile, njengendawo ye-aerospace, izithuthi, kunye namacandelo amandla ahlaziyekayo.

Ukuzinikela kweSemicera ekuveliseni izinto ezintsha kunye nokugqwesa kuyabonakala kuhlobo lwethu lwe-P-SiC Substrate Wafer. Ngokudibanisa ezi wafers kwinkqubo yakho yokuvelisa, uyaqinisekisa ukuba izixhobo zakho ziyaxhamla kwiipropathi ezikhethekileyo zobushushu kunye nezombane ze-SiC, zibenza basebenze ngokufanelekileyo phantsi kweemeko ezinzima.

Utyalo-mali kuhlobo lwe-P-uhlobo lwe-SiC Substrate Wafer ithetha ukukhetha imveliso edibanisa inzululwazi yemathiriyeli ephuma phambili nobunjineli obucokisekileyo. I-Semicera izinikele ekuxhaseni isizukulwana esilandelayo setekhnoloji ye-elektroniki kunye ne-optoelectronic, ibonelela ngezinto ezibalulekileyo ezifunekayo kwimpumelelo yakho kwishishini le-semiconductor.

Izinto

Imveliso

Uphando

Dummy

Iiparamitha zeCrystal

Iipolytype

4H

Imposiso yokuma kumphezulu

<11-20>4±0.15°

Iiparamitha zoMbane

I-Dopant

n-uhlobo lweNitrojeni

Ukuxhathisa

0.015-0.025ohm · cm

IiParameters zoomatshini

Ububanzi

150.0±0.2mm

Ukutyeba

350±25 μm

Ukuqhelaniswa neflethi ephambili

[1-100] ± 5 °

Ubude beflethi bokuqala

47.5±1.5mm

Iflethi yesibini

Akukho nanye

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Ukuqubuda

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

I-Wap

≤35 μm

≤45 μm

≤55 μm

Ngaphambili(Si-face) uburhabaxa(AFM)

Ra≤0.2nm (5μm*5μm)

Ulwakhiwo

Ukuxinana kweMibhobho

<1 iya/cm2

<10 i/cm2

<15 i/cm2

Ukungcola kwesinyithi

≤5E10athom/cm2

NA

I-BPD

≤1500 i-ea/cm2

≤3000 i/cm2

NA

TSD

≤500 i/cm2

≤1000 nge-cm2

NA

Umgangatho wangaphambili

Ngaphambili

Si

Ukugqitywa komphezulu

Si-ubuso CMP

Amacandelo

≤60ea/wafer (ubukhulu≥0.3μm)

NA

Imikrwelo

≤5ea/mm. Ubude obongezelekayo ≤Ububanzi

Ubude obongezelekayo≤2*Ububanzi

NA

Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko

Akukho nanye

NA

Iitshiphusi ze-Edge/i-idents/fracture/hex plates

Akukho nanye

Iindawo zePolytype

Akukho nanye

Indawo eyongezelekayo≤20%

Indawo eyongezelekayo≤30%

Ukumakishwa kwelaser yangaphambili

Akukho nanye

Umgangatho wasemva

Emva kokugqiba

C-ubuso CMP

Imikrwelo

≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi

NA

Iziphene zangasemva (iitshiphusi zomphetho/iindents)

Akukho nanye

Umqolo uburhabaxa

Ra≤0.2nm (5μm*5μm)

Ukumakishwa kwelaser yangasemva

1 mm (ukusuka kumphetho ophezulu)

Edge

Edge

Chamfer

Ukupakishwa

Ukupakishwa

I-Epi ilungele ukupakishwa kwevacuum

Ukupakishwa kweekhasethi ezininzi

*Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD.

ubuchwephesha_1_2_ubungakanani
Iifafa zeSiC

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