IMOCVDIndlela yenye yezona nkqubo zizinzileyo ezisetyenziswayo ngoku kwishishini ukukhulisa umgangatho ophakamileyo wecrystalline bhanyabhanya enye ebhityileyo, efana nesigaba esinye se-InGaN epilayers, izixhobo ze-III-N, kunye neefilimu zesemiconductor ezinezakhiwo ezininzi ze-quantum kakuhle, kwaye ibaluleke kakhulu ukwenziwa kwezixhobo zesemiconductor kunye ne-optoelectronic.
ISiC ukutyabeka MOCVD suceptorsisiphatho se-wafer esikhethekileyo esiqatywe ngesilicon carbide (SiC) yeepitaxial ukukhula kwinkqubo yesinyithi ye-organic chemical vapor deposition (MOCVD) inkqubo.
I-coating ye-SiC inokumelana nekhemikhali egqwesileyo kunye nokuzinza kwe-thermal, okwenza kube lukhetho olufanelekileyo kwii-MOCVD susceptors ezisetyenziselwa kwiinkqubo zokukhula kwe-epitaxial.
Inxalenye ephambili yenkqubo ye-MOCVD yi-susceptor, eyona nto ibalulekileyo ekuqinisekiseni ukufana kunye nomgangatho weefilimu ezincinci eziveliswayo.
Yintoni i-susceptor? I-susceptor licandelo elikhethekileyo elisetyenziswe kwinkqubo ye-MOCVD ukuxhasa kunye nokutshisa i-substrate apho ifilimu encinci ifakwe kuyo. Inemisebenzi emininzi, ebandakanya ukufunxa amandla ombane, ukuyiguqula ibe bubushushu, kwaye isasaze ngokulinganayo ubushushu kwi-substrate. Oku kufudumeza okufanayo kubalulekile ekukhuleni kweefilimu ezibhityileyo ezifanayo ezinobunzima obuchanekileyo kunye nokwakheka.
Iindidi zabarhanelwa:
1. Izixhasi zegraphite: Iisusceptors zegraphite zihlala zigqunyelelwa ngamaleko akhuselayo afanai-silicon carbide (SiC), eyaziwa ngokuba yi-conductivity ephezulu ye-thermal kunye nokuzinza. IUkwaleka kweSiCinikeza indawo enzima, ekhuselayo exhathisa ukubola kunye nokuthotywa kwamaqondo aphezulu.
2. I-silicon carbide (i-SiC) i-susceptors: Ezi zixhasi zenziwe ngokupheleleyo nge-SiC kwaye zinozinzo oluhle kakhulu lwe-thermal kunye nokumelana nokugqoka. I-SiC susceptors ifanelekile ngokukodwa kwiinkqubo zokushisa okuphezulu kunye neendawo ezinobungozi.
Basebenza njani abarhanelwa kwi-MOCVD:
Kwinkqubo ye-MOCVD, ii-precursors zingeniswa kwigumbi lokuphendula apho zibola khona kwaye ziphendule ukwenza ifilimu encinci kwi-substrate. I-susceptor idlala indima ebalulekileyo ngokuqinisekisa ukuba i-substrate ifudunyezwa ngokulinganayo, okubalulekileyo ekufezekiseni iipropati zefilimu ezingaguqukiyo kuwo wonke umphezulu we-substrate. Izinto eziphathekayo kunye noyilo lwe-susceptor zikhethwe ngokucophelela ukuhlangabezana neemfuno ezithile zenkqubo yokubeka, njengoluhlu lweqondo lokushisa kunye nokuhambelana kweekhemikhali.
Izibonelelo zokusebenzisa i-susceptors ezikumgangatho ophezulu:
• Umgangatho wefilimu ophuculweyo: Ngokubonelela ngokusasazwa kobushushu obufanayo, i-susceptor inceda ukufezekisa iifilimu ezinobunzima obuhambelanayo kunye nokubunjwa, okubaluleke kakhulu ekusebenzeni kwezixhobo ze-semiconductor.
• Uphuculo lwenkqubo yokusebenza kakuhle: Izixhasi ezikumgangatho ophezulu zonyusa ukusebenza kakuhle kwenkqubo ye-MOCVD ngokunciphisa amathuba okuba neziphene nokwandisa isivuno seefilimu ezisebenzisekayo.
• Ubomi kunye nokuthembeka: Ii-susceptors ezenziwe ngezinto ezihlala zifana ne-SiC ziqinisekisa ukuthembeka kwexesha elide kunye nokunciphisa iindleko zokugcina.
I-susceptor iyinxalenye ebalulekileyo kwinkqubo ye-MOCVD kwaye ichaphazela ngokuthe ngqo umgangatho kunye nokusebenza kakuhle kwefilimu encinci. Ukufumana ulwazi oluthe kratya malunga nobukhulu obukhoyo, i-MOCVD susceptors kunye namaxabiso, nceda unganqikazi ukuqhagamshelana nathi. Iinjineli zethu ziya kukuvuyela ukukucebisa ngezinto ezifanelekileyo kwaye uphendule yonke imibuzo yakho.
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Ixesha lokuposa: Aug-12-2024