Inkqubo yokuvelisa i-silicon carbide wafer

Isiqwenga se-silicon ye-carbideyenziwe ngomgubo ococekileyo wesilicon kunye nococeko oluphezulu lwekhabhoni engumgubo njengezinto ezikrwada, kunye nesilicon carbide crystal ikhuliswa ngendlela yokuhambisa umphunga womzimba (PVT), kwaye icutshungulwe yangena.ilitye le-silicon carbide.

① Ukwenziwa kwemathiriyeli ekrwada.Ucoceko oluphezulu lwe-silicon powder kunye ne-carbon powder powder ecocekileyo yaxutywa ngokomlinganiselo othile, kwaye amasuntswana e-silicon carbide aye adityaniswa kubushushu obuphezulu ngaphezu kwe-2,000 ℃.Emva kokutyumza, ukucocwa kunye nezinye iinkqubo, izinto ezicocekileyo ze-silicon carbide powder ezihlangabezana neemfuno zokukhula kwekristale zilungiswa.

② Ukukhula kwekristale.Ukusebenzisa ubunyulu obuphezulu be-SIC yomgubo njengezinto ezikrwada, ikristale yakhuliswa yindlela yokuhanjiswa komphunga womzimba (PVT) kusetyenziswa iziko lokukhula kwekristale eliziphuhlisileyo.

③ ukusetyenzwa kwe-ingot.I-silicon carbide crystal ingot efunyenweyo yayijongiswe yi-X-ray enye ikristale orientator, emva koko yagatywa yaza yaqengqeleka, yaze yacutshungulwa yaba yi-silicon carbide crystal esemgangathweni.

④ Ukusika kwekristale.Ukusebenzisa izixhobo zokusika zemigca emininzi, iikristale ze-silicon carbide zisikwa zibe ngamashiti amancinci anobunzima obungekho ngaphezulu kwe-1mm.

⑤ Ukugaya itshiphu.I-wafer igutyungelwa kumcaba kunye noburhabaxa obufunwa yidayimane yolwelo lokusila lobukhulu obahlukeneyo.

⑥ Ukuguliswa kwetshiphu.I-silicon carbide epholisiweyo ngaphandle komonakalo ongaphezulu ifunyenwe ngokucolwa ngoomatshini kunye ne-chemical mechanical polishing.

⑦ Ukufunyanwa kwe-chip.Sebenzisa i-microscope ebonakalayo, i-X-ray diffractometer, i-atomic force microscope, i-non-contact resistivity tester, i-surface flatness tester, i-surface defect comprehensive tester kunye nezinye izixhobo kunye nezixhobo zokubona ubuninzi be-microtubule, umgangatho wekristale, uburhabaxa bomphezulu, ukuxhathisa, i-warpage, i-curvature, ukutshintsha kobukhulu, ukukrwela komphezulu kunye nezinye iiparamitha ze-silicon carbide wafer.Ngokwale nto, umgangatho womgangatho we-chip unqunywe.

⑧ Ukucoca i-chip.Iphepha le-silicon carbide polishing sheet licocwa nge-agent yokucoca kunye namanzi acocekileyo ukususa ulwelo oluseleyo lokupholisha kunye nolunye ukungcola komhlaba kwiphepha lokupolisha, kwaye emva koko i-wafer ivuthelwa kwaye ishukunyiswe yomile yi-nitrogen ephezulu ecocekileyo kunye nomatshini wokomisa;I-wafer ifakwe kwibhokisi yeshiti ecocekileyo kwigumbi elicoceke kakhulu ukwenza iwafer esezantsi elungele ukusetyenziswa yesilicon carbide.

Ubukhulu besayizi yetshiphu, kokukhona kunzima ukukhula kwekristale ehambelanayo kunye nobuchwepheshe bokulungisa, kwaye kokukhona kuphezulu ukusebenza kakuhle kokwenziwa kwezixhobo ezisezantsi, ixabiso leyunithi lisezantsi.