Inkqubo yokuvelisa i-silicon carbide wafer

Isiqwenga se-silicon ye-carbideyenziwe ngomgubo ococekileyo wesilicon kunye nococeko oluphezulu lwekhabhoni engumgubo njengezinto ezikrwada, kunye nesilicon carbide crystal ikhuliswa ngendlela yokudlulisa umphunga womzimba (PVT), kwaye icutshungulwe yangena.ilitye le-silicon carbide.

1.Ukwenziwa kwemathiriyeli ekrwada:

Ucoceko oluphezulu lwe-silicon powder kunye ne-carbon powder powder ecocekileyo yaxutywa ngokomlinganiselo othile, kwaye amasuntswana e-silicon carbide aye adityaniswa kubushushu obuphezulu ngaphezu kwe-2,000 ℃. Emva kokutyumza, ukucocwa kunye nezinye iinkqubo, izinto ezicocekileyo ze-silicon carbide powder ezihlangabezana neemfuno zokukhula kwekristale zilungiswa.

2.Ukukhula kweCrystal:

Ukusebenzisa ubunyulu obuphezulu be-SIC yomgubo njengezinto ezikrwada, ikristale yakhuliswa yindlela yokuhanjiswa komphunga womzimba (PVT) kusetyenziswa iziko lokukhula kwekristale eliziphuhlisileyo.

3.ingot processing:

I-silicon carbide crystal ingot efunyenweyo yayijongiswe yi-X-ray enye ikristale orientator, emva koko yagatywa yaza yaqengqeleka, yaze yacutshungulwa yaba yi-silicon carbide crystal esemgangathweni.

4. Ukusika ngekristale:

Ukusebenzisa izixhobo zokusika zemigca emininzi, iikristale ze-silicon carbide zisikwa zibe ngamashiti amancinci anobunzima obungekho ngaphezulu kwe-1mm.

5.Ukusila iChip:

I-wafer igutyungelwa kumcaba kunye noburhabaxa obufunwa yidayimani yolwelo lokusila lobungakanani bamasuntswana ahlukeneyo.

6.Ukugulisa iChip:

I-silicon carbide epholisiweyo ngaphandle komonakalo ongaphezulu ifunyenwe ngokucolwa ngoomatshini kunye ne-chemical mechanical polishing.

7.Ukubonwa kweChip:

Sebenzisa i-microscope ebonakalayo, i-X-ray diffractometer, i-atomic force microscope, i-non-contact resistivity tester, i-surface flatness tester, i-face defect comprehensive tester kunye nezinye izixhobo kunye nezixhobo zokubona ubuninzi be-microtubule, umgangatho wekristale, uburhabaxa bomphezulu, ukuxhathisa, i-warpage, i-curvature, Ukutshintsha kobukhulu, ukukrwela komphezulu kunye nezinye iiparamitha ze-silicon carbide wafer. Ngokwale nto, umgangatho womgangatho we-chip unqunywe.

8.Ukucoca itshiphu:

Iphepha le-silicon carbide polishing sheet licocwa nge-agent yokucoca kunye namanzi acocekileyo ukususa ulwelo oluseleyo lokupholisha kunye nolunye ukungcola komhlaba kwiphepha lokupolisha, kwaye emva koko i-wafer ivuthelwa kwaye ishukunyiswe yomile yi-nitrogen ephezulu ecocekileyo kunye nomatshini wokomisa; I-wafer ifakwe kwibhokisi yeshiti ecocekileyo kwigumbi elicoceke kakhulu ukwenza i-wafer ye-silicon carbide esezantsi elungele ukusetyenziswa.

Ubukhulu besayizi ye-chip, kunzima ngakumbi ukukhula kwekristale ehambelanayo kunye nobuchwepheshe bokucubungula, kwaye ukuphakama kokwenziwa kwezixhobo ezisezantsi, ixabiso leyunithi lisezantsi.