SiC coated isiseko segraphite

Njengenye yamacandelo angundoqo weIzixhobo ze-MOCVD, isiseko segraphite ngumqhubi kunye nomzimba wokufudumeza we-substrate, echaza ngokuthe ngqo ukufana kunye nokucoceka kwezinto zefilimu, ngoko umgangatho wayo uchaphazela ngokuthe ngqo ukulungiswa kwephepha le-epitaxial, kwaye kwangaxeshanye, kunye nokwanda kwenani le-epitaxial sheet. kusetyenziswa kunye nokutshintsha kweemeko zokusebenza, kulula kakhulu ukunxiba, ezizezokutya.

Nangona i-graphite ine-conductivity egqwesileyo ye-thermal kunye nokuzinza, inenzuzo enhle njengenxalenye yesisekoIzixhobo ze-MOCVD, kodwa kwinkqubo yokuvelisa, i-graphite iya kutshabalalisa i-powder ngenxa ye-residu ye-corrosive gases kunye ne-metallic organics, kwaye ubomi benkonzo yesiseko segraphite buya kuncitshiswa kakhulu.Ngelo xesha, i-graphite powder ewayo iya kubangela ukungcola kwi-chip.

Ukuvela kobugcisa bokugquma kunokubonelela ngokulungiswa komgubo womphezulu, ukunyusa umgangatho we-thermal conductivity, kunye nokulinganisa ukusabalalisa ubushushu, obuye bubuchwephesha obuphambili bokusombulula le ngxaki.Isiseko segraphite ngaphakathiIzixhobo ze-MOCVDukusetyenziswa bume, isiseko segraphite yokwambathisa umphezulu kufuneka ukuhlangabezana ezi mpawu zilandelayo:

(1) Isiseko segraphite sinokugqunywa ngokupheleleyo, kwaye ukuxinana kukuhle, ngaphandle koko isiseko segraphite silula ukutshatyalaliswa kwigesi ephazamisayo.

(2) Amandla okudibanisa kunye nesiseko segraphite aphezulu ukuze kuqinisekiswe ukuba i-coating ayikho lula ukuwa emva kobushushu obuphezulu kunye nemijikelo yobushushu obuphantsi.

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I-SiC ineenzuzo zokuxhathisa i-corrosion, i-conductivity ephezulu ye-thermal, i-thermal shock resistance kunye nokuzinza okuphezulu kweekhemikhali, kwaye inokusebenza kakuhle kwi-GaN epitaxial atmosphere.Ukongezelela, i-coefficient yokwandisa i-thermal ye-SiC ihluke kakhulu kwi-graphite, ngoko ke i-SiC yinto ekhethiweyo yokugubungela umphezulu wesiseko segraphite.

Okwangoku, i-SiC eqhelekileyo iyinhloko ye-3C, i-4H kunye ne-6H uhlobo, kwaye i-SiC isebenzisa iintlobo ze-crystal ezahlukeneyo.Ngokomzekelo, i-4H-SiC inokuvelisa izixhobo eziphezulu zamandla;I-6H-SiC yeyona nto izinzile kwaye inokuvelisa izixhobo ze-photoelectric;Ngenxa yesakhiwo esifana ne-GaN, i-3C-SiC ingasetyenziselwa ukuvelisa i-GaN epitaxial layer kunye nokuvelisa izixhobo ze-SiC-GaN RF.I-3C-SiC ikwabizwa ngokuba yiβ-SiC, kunye nokusetyenziswa okubalulekileyoβ-SiC njengefilimu kunye nempahla yokugqoka, ngokoβ-SiC okwangoku iyona nto iphambili yokwaleka.