Njengenye yamacandelo angundoqo weIzixhobo ze-MOCVD, isiseko segraphite ngumqhubi kunye nomzimba wokufudumeza we-substrate, echaza ngokuthe ngqo ukufana kunye nokucoceka kwezinto zefilimu, ngoko umgangatho wayo uchaphazela ngokuthe ngqo ukulungiswa kwephepha le-epitaxial, kwaye kwangaxeshanye, kunye nokwanda kwenani le-epitaxial sheet. kusetyenziswa kunye nokutshintsha kweemeko zokusebenza, kulula kakhulu ukunxiba, ezizezokutya.
Nangona i-graphite ine-conductivity egqwesileyo ye-thermal kunye nokuzinza, inenzuzo enhle njengenxalenye yesisekoIzixhobo ze-MOCVD, kodwa kwinkqubo yokuvelisa, i-graphite iya kutshabalalisa i-powder ngenxa ye-residu ye-corrosive gases kunye ne-metallic organics, kwaye ubomi benkonzo yesiseko segraphite buya kuncitshiswa kakhulu. Ngelo xesha, i-graphite powder ewayo iya kubangela ukungcola kwi-chip.
Ukuvela kobugcisa bokugquma kunokubonelela ngokulungiswa komgubo womphezulu, ukunyusa umgangatho we-thermal conductivity, kunye nokulinganisa ukusabalalisa ubushushu, obuye bubuchwephesha obuphambili bokusombulula le ngxaki. Isiseko segraphite ngaphakathiIzixhobo ze-MOCVDukusetyenziswa bume, isiseko segraphite yokwambathisa umphezulu kufuneka ukuhlangabezana ezi mpawu zilandelayo:
(1) Isiseko segraphite sinokugqunywa ngokupheleleyo, kwaye ukuxinana kukuhle, ngaphandle koko isiseko segraphite silula ukutshatyalaliswa kwigesi ephazamisayo.
(2) Amandla okudibanisa kunye nesiseko segraphite aphezulu ukuze kuqinisekiswe ukuba i-coating ayikho lula ukuwa emva kobushushu obuphezulu kunye nemijikelo yobushushu obuphantsi.
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I-SiC ineenzuzo zokuxhathisa i-corrosion, i-conductivity ephezulu ye-thermal, i-thermal shock resistance kunye nokuzinza okuphezulu kweekhemikhali, kwaye inokusebenza kakuhle kwi-GaN epitaxial atmosphere. Ukongezelela, i-coefficient yokwandisa i-thermal ye-SiC ihluke kakhulu kwi-graphite, ngoko ke i-SiC yinto ekhethiweyo yokugubungela umphezulu wesiseko segraphite.
Okwangoku, i-SiC eqhelekileyo iyinhloko ye-3C, i-4H kunye ne-6H uhlobo, kwaye i-SiC isebenzisa iintlobo ze-crystal ezahlukeneyo. Ngokomzekelo, i-4H-SiC inokuvelisa izixhobo eziphezulu zamandla; I-6H-SiC yeyona nto izinzile kwaye inokuvelisa izixhobo ze-photoelectric; Ngenxa yesakhiwo esifana ne-GaN, i-3C-SiC ingasetyenziselwa ukuvelisa i-GaN epitaxial layer kunye nokuvelisa izixhobo ze-SiC-GaN RF. I-3C-SiC ikwabizwa ngokuba yiβ-SiC, kunye nokusetyenziswa okubalulekileyoβ-SiC njengefilimu kunye nempahla yokugqoka, ngokoβ-SiC okwangoku iyona nto iphambili yokwaleka.
Ixesha lokuposa: Nov-06-2023