Okwangoku, iindlela zokulungiselela ze-SiC zokugquma zibandakanya indlela ye-gel-sol, indlela yokufaka, indlela yokugqoka ibrashi, indlela yokutshiza i-plasma, indlela yokusabela kwegesi yeekhemikhali (CVR) kunye nendlela yokubeka umphunga wekhemikhali (CVD).
Indlela yokufakela:
Indlela luhlobo lobushushu obuphezulu obuqinileyo besigaba sokuntywila, obusebenzisa ikakhulu umxube weSi powder kunye nomgubo weC njengomgubo wokufakela, i-graphite matrix ibekwe kumgubo wokufakela, kwaye ubushushu obuphezulu bobushushu buqhutywa kwirhasi engasebenziyo. , kwaye ekugqibeleni i-coating ye-SiC ifunyenwe kumphezulu we-graphite matrix.Inkqubo ilula kwaye indibaniselwano phakathi kokugquma kunye ne-substrate ilungile, kodwa ukufana kwengubo ecaleni kolwalathiso lobunzima kubi, okulula ukuvelisa imingxuma emininzi kwaye kukhokelela ekuxhathiseni i-oxidation embi.
Indlela yokwaleka ibrashi:
Indlela yokwaleka ibrashi ikakhulu ukubrasha ulwelo imathiriyeli ekrwada kumphezulu grafiti matrix, uze unyange imathiriyeli ekrwada kwiqondo lobushushu elithile ukulungiselela ukutyabeka.Inkqubo ilula kwaye ixabiso liphantsi, kodwa i-coating elungiselelwe yindlela yokugqoka ibrashi ibuthathaka ngokudibanisa ne-substrate, ukufana kwengubo kubi, ukugquma kuncinci kwaye ukuxhathisa kwe-oxidation kuphantsi, kwaye ezinye iindlela ziyafuneka ukuncedisa. yona.
Indlela yokutshiza ngeplasma:
Indlela yokutshiza i-plasma ikakhulu ukutshiza izinto ezinyibilikayo okanye ezincibilikisiweyo ezincibilikisiwe kumphezulu we-graphite matrix ngompu weplasma, kwaye emva koko uqina kwaye ubophe ukwenza isambatho.Indlela ilula ukuyisebenzisa kwaye inokulungiselela i-silicon carbide exineneyo yokwaleka, kodwa i-silicon carbide yokwaleka elungiswe yindlela ihlala ibuthathaka kakhulu kwaye ikhokelela ekuxhathiseni oksijini obuthathaka, ngoko ke isetyenziselwa ukulungiswa kwe-SiC ye-composite yokwaleka ukuphucula. umgangatho wokwaleka.
Indlela ye-gel-sol:
Indlela ye-gel-sol ikakhulu kukulungisa isisombululo esifanayo kunye nesicacileyo se-sol esigubungela umphezulu we-matrix, yomiswe kwijeli kwaye emva koko i-sintering ukufumana i-coating.Le ndlela ilula ukuyisebenzisa kwaye iphantsi kweendleko, kodwa i-coating eveliswayo inezinye iintsilelo ezifana nokuxhathisa ukutshitshiswa kwe-thermal kunye nokuqhekeka okulula, ngoko ayikwazi ukusetyenziswa ngokubanzi.
Isenzo seGesi yeMichiza (CVR) :
I-CVR ivelisa ikakhulu i-SiC coating ngokusebenzisa i-Si kunye ne-SiO2 powder ukuvelisa i-SiO umphunga kwiqondo lokushisa eliphezulu, kunye nochungechunge lwee-chemical reactions zenzeka kumphezulu we-substrate ye-C.I-coating ye-SiC elungiselelwe yile ndlela idibene ngokusondeleyo kwi-substrate, kodwa ubushushu bokusabela buphezulu kwaye ixabiso liphezulu.
Ukubekwa kweMichiza yoMphunga (CVD) :
Okwangoku, i-CVD yeyona teknoloji iphambili yokulungiselela i-SiC coating kwi-substrate surface.Inkqubo ephambili luhlu lweempendulo ezibonakalayo kunye neekhemikhali ze-gas phase reactant material kwi-substrate surface, kwaye ekugqibeleni i-coating ye-SiC ilungiselelwe ngokubeka kwi-substrate surface.I-coating ye-SiC elungiselelwe yi-teknoloji ye-CVD idityaniswe ngokusondeleyo kumphezulu we-substrate, enokuthi iphucule ngokufanelekileyo ukuxhathisa i-oxidation kunye nokumelana ne-ablative yezinto ze-substrate, kodwa ixesha lokubeka le ndlela lide, kwaye igesi yokusabela inetyhefu ethile. igesi.
Ixesha lokuposa: Nov-06-2023