Okwangoku, iindlela zokulungiselela zeUkwaleka kweSiCikakhulu zibandakanya indlela yejeli-sol, indlela yokufaka, indlela yokugquma ibrashi, indlela yokutshiza iplasma, indlela yokusabela kwegesi yemichiza (CVR) kunye nendlela yokubeka umphunga wekhemikhali (CVD).
Indlela yokufakela:
Indlela luhlobo lobushushu obuphezulu obuqinileyo besigaba sokuntywila, obusebenzisa ikakhulu umxube weSi powder kunye nomgubo weC njengomgubo wokufakela, i-graphite matrix ibekwe kumgubo wokufakela, kwaye ubushushu obuphezulu be-sintering buqhutywa kwirhasi engasebenziyo. , kwaye ekugqibeleni iUkwaleka kweSiCifunyenwe kumphezulu we-graphite matrix. Inkqubo ilula kwaye indibaniselwano phakathi kokugquma kunye ne-substrate ilungile, kodwa ukufana kwengubo ecaleni kolwalathiso lobunzima kubi, okulula ukuvelisa imingxuma emininzi kwaye kukhokelela ekuxhathiseni i-oxidation embi.
Indlela yokwaleka ibrashi:
Indlela yokwaleka ibrashi ikakhulu ukubrasha ulwelo imathiriyeli ekrwada kumphezulu grafiti matrix, uze unyange imathiriyeli ekrwada kwiqondo lobushushu elithile ukulungiselela ukutyabeka. Inkqubo ilula kwaye ixabiso liphantsi, kodwa i-coating elungiselelwe yindlela yokugqoka ibrashi ibuthathaka ngokudibanisa ne-substrate, ukufana kwengubo kubi, ukugquma kuncinci kwaye ukuxhathisa kwe-oxidation kuphantsi, kwaye ezinye iindlela ziyafuneka ukuncedisa. yona.
Indlela yokutshiza ngeplasma:
Indlela yokutshiza iplasma ikakhulu kukutshiza izinto ezinyibilikayo okanye ezincibilikisiweyo ezincibilikisiwe kumphezulu wegrafu yegrafu ngompu weplasma, emva koko uqinise kwaye ubophe ukuze wenze isambatho. Indlela ilula ukuyisebenzisa kwaye inokulungiselela i-silicon carbide exineneyo yokwaleka, kodwa i-silicon carbide yokwaleka elungiswe yindlela ihlala ibuthathaka kakhulu kwaye ikhokelela ekunganyangekiyo kwe-oxidation, ngoko ke isetyenziselwa ukulungiswa kwe-SiC composite coating ukuphucula. umgangatho wokwaleka.
Indlela ye-gel-sol:
Indlela ye-gel-sol ikakhulu kukulungisa isisombululo esifanayo kunye nesicacileyo se-sol esigubungela umphezulu we-matrix, yomiswe kwijeli kwaye emva koko i-sintering ukufumana i-coating. Le ndlela ilula ukuyisebenzisa kwaye iphantsi kweendleko, kodwa i-coating eveliswayo inezinye iintsilelo ezifana nokuxhathisa ukutshitshiswa kwe-thermal kunye nokuqhekeka okulula, ngoko ayikwazi ukusetyenziswa ngokubanzi.
Isenzo seGesi yeMichiza (CVR) :
I-CVR ivelisa ubukhulu becalaUkwaleka kweSiCngokusebenzisa i-Si kunye ne-SiO2 powder ukuvelisa i-SiO i-steam kwiqondo lokushisa eliphezulu, kunye nochungechunge lwee-chemical reactions zenzeke kumphezulu we-C substrate yezinto. IUkwaleka kweSiCelungiswe yile ndlela idityaniswe ngokusondeleyo kwi-substrate, kodwa ubushushu bokusabela buphezulu kwaye ixabiso liphezulu.
Ukubekwa kweMichiza yoMphunga (CVD) :
Okwangoku, i-CVD yeyona teknoloji iphambili yokulungiselelaUkwaleka kweSiCkumphezulu we-substrate. Inkqubo ephambili luhlu lweempendulo ezibonakalayo kunye neekhemikhali ze-gas phase reactant material kwi-substrate surface, kwaye ekugqibeleni i-coating ye-SiC ilungiselelwe ngokubeka kwi-substrate surface. I-coating ye-SiC elungiselelwe yi-teknoloji ye-CVD idityaniswe ngokusondeleyo kumphezulu we-substrate, enokuthi iphucule ngokufanelekileyo ukuxhathisa i-oxidation kunye nokumelana ne-ablative yezinto ze-substrate, kodwa ixesha lokubeka le ndlela lide, kwaye igesi yokusabela inetyhefu ethile. igesi.
Ixesha lokuposa: Nov-06-2023