Ukuphonononga iidiski ze-semiconductor silicon carbide epitaxial disks: Izibonelelo zokusebenza kunye nethemba lokusetyenziswa

Kwinkalo yanamhlanje yetekhnoloji ye-elektroniki, izixhobo ze-semiconductor zidlala indima ebalulekileyo.Phakathi kwazo, i-silicon carbide (i-SiC) njenge-wide band gap semiconductor imathiriyeli, enezibonelelo zayo zokusebenza ezibalaseleyo, ezinjengendawo yokuwohloka kombane, isantya esiphezulu sokugcwala, ukuhanjiswa kwe-thermal ephezulu, njl.njl., ngokuthe ngcembe iba yingqwalasela yabaphandi kunye neenjineli.I-silicon carbide epitaxial disk, njengenxalenye ebalulekileyo yayo, ibonise amandla amakhulu okusebenza.

一、epitaxial disk performance: iinzuzo ezipheleleyo
1. Intsimi yombane ye-Ultra-high-high breakdown: xa kuthelekiswa nezinto ze-silicon zendabuko, intsimi yombane yokuchithwa kwe-silicon carbide ingaphezu kwamaxesha e-10.Oku kuthetha ukuba phantsi kweemeko zombane ezifanayo, izixhobo zombane ezisebenzisa i-silicon carbide epitaxial disks ziyakwazi ukumelana nemisinga ephezulu, ngaloo ndlela zidala i-high-voltage, high-frequency, high-power-high-power devices.
2. Isantya esiphezulu se-saturation: isantya sokuzalisa i-silicon carbide ingaphezulu kwe-2 amaxesha e-silicon.Ukusebenza kwiqondo lokushisa eliphezulu kunye nesantya esiphezulu, i-silicon carbide epitaxial disk yenza ngcono, ephucula kakhulu ukuzinza nokuthembeka kwezixhobo zombane.
3. Ukusebenza okuphezulu kwe-thermal conductivity: i-thermal conductivity ye-silicon carbide ingaphezulu kwe-3 amaxesha e-silicon.Eli nqaku livumela izixhobo zombane ukuba zichithe ngcono ubushushu ngexesha lokuqhubeka nokusebenza kwamandla aphezulu, ngaloo ndlela kuthintelwa ukufudumeza nokuphucula ukhuseleko lwesixhobo.
4. Ukuzinza kweekhemikhali okugqwesileyo: kwiindawo ezigqithiseleyo ezifana nokushisa okuphezulu, uxinzelelo oluphezulu kunye nemitha eqinile, ukusebenza kwe-silicon carbide kusazinzile njengangaphambili.Eli nqaku lenza ukuba i-silicon carbide epitaxial disk igcine ukusebenza kakuhle kwindawo enzima.
二、inkqubo yokuvelisa: iqingqwe ngononophelo
Iinkqubo eziphambili zokwenza i-SIC epitaxial disk ibandakanya i-physical vapor deposition (PVD), i-chemical vapor deposition (CVD) kunye nokukhula kwe-epitaxial.Nganye kwezi nkqubo zineempawu zayo kwaye zifuna ulawulo oluchanekileyo lweeparamitha ezahlukeneyo ukufezekisa iziphumo ezilungileyo.
1. Inkqubo ye-PVD: Ngokufudumala okanye ukutshiza kunye nezinye iindlela, i-SiC target ifakwe kwi-substrate ukwenza ifilimu.Ifilimu elungiselelwe yile ndlela inokucoceka okuphezulu kunye ne-crystallinity enhle, kodwa isantya sokuvelisa sincinci.
2. Inkqubo ye-CVD: Ngokuqhekeza i-silicon carbide source gas kwiqondo lokushisa eliphezulu, ifakwe kwi-substrate ukwenza ifilimu encinci.Ubunzima kunye nokufana kwefilimu elungiselelwe yile ndlela iyalawuleka, kodwa ukucoceka kunye ne-crystallinity akubi.
3. Ukukhula kwe-Epitaxial: ukukhula kwe-SiC epitaxial layer kwi-silicon ye-monocrystalline okanye ezinye izinto ze-monocrystalline nge-chemical vapor deposition method.I-epitaxial layer elungiselelwe yile ndlela inokuhambelana kakuhle kunye nokusebenza okugqwesileyo kunye ne-substrate material, kodwa ixabiso liphezulu kakhulu.
三、Ithemba lesicelo: Khanyisa ikamva
Ngophuhliso oluqhubekayo lwetekhnoloji ye-elektroniki yamandla kunye nemfuno eyandayo yokusebenza okuphezulu kunye nokuthembeka okuphezulu kwezixhobo zombane, i-silicon carbide epitaxial disk inethemba elibanzi lesicelo kwimveliso yesixhobo se-semiconductor.Isetyenziselwa ngokubanzi ukuveliswa kwezixhobo eziphezulu ze-semiconductor zamandla aphezulu, ezifana nokutshintsha kombane wombane, ii-inverters, ii-rectifiers, njl. Ukongeza, isetyenziswa ngokubanzi kwiiseli zelanga, i-LED kunye nezinye iindawo.
Ngeenzuzo zayo zokusebenza ezizodwa kunye nokuphuculwa okuqhubekayo kwenkqubo yokuvelisa, i-silicon carbide epitaxial disk ngokuthe ngcembe ibonisa amandla ayo amakhulu kwintsimi ye-semiconductor.Sinesizathu sokukholelwa ukuba kwikamva lenzululwazi nobugcisa, iya kuba nendima ebaluleke ngakumbi.