Kwinkalo yanamhlanje yetekhnoloji ye-elektroniki, izixhobo ze-semiconductor zidlala indima ebalulekileyo. Phakathi kwabo,i-silicon carbide (SiC)njengesixhobo esibanzi se-gap semiconductor, kunye nezibonelelo zayo zokusebenza ezibalaseleyo, ezinjengendawo yombane eyophukayo, isantya esiphezulu sokugcwala, ukuhanjiswa kwe-thermal ephezulu, njl. Ii-silicon carbide epitaxial disk, njengenxalenye ebalulekileyo yayo, ibonise amandla amakhulu okusebenza.
一、epitaxial disk performance: iinzuzo ezipheleleyo
1. Indawo yombane eyophukayo kakhulu: xa kuthelekiswa nezinto zesilicon zemveli, indawo yombane eyophukayo.i-silicon carbidengaphezulu kwamaxesha ali-10. Oku kuthetha ukuba phantsi kweemeko zombane ezifanayo, izixhobo zombane zisebenzisai-silicon carbide epitaxial disksinokumelana nemisinga ephezulu, ngaloo ndlela idala i-high-voltage, i-high-frequency, izixhobo zombane ezinamandla aphezulu.
2. Isantya sokugcwalisa ngesantya esiphezulu: isantya sokugcwalisai-silicon carbideingaphezulu kwe-2 amaxesha e-silicon. Ukusebenza kwiqondo lokushisa eliphezulu kunye nesantya esiphezulu, ii-silicon carbide epitaxial diskyenza ngcono, nto leyo ephucula kakhulu ukuzinza nokuthembeka kwezixhobo zombane.
3. Ukusebenza okuphezulu kwe-thermal conductivity: i-thermal conductivity ye-silicon carbide ingaphezulu kwe-3 amaxesha e-silicon. Eli nqaku livumela izixhobo zombane ukuba zichithe ngcono ubushushu ngexesha lokuqhubeka nokusebenza kwamandla aphezulu, ngaloo ndlela kuthintelwa ukufudumeza nokuphucula ukhuseleko lwesixhobo.
4. Ukuzinza kweekhemikhali okugqwesileyo: kwiindawo ezigqithiseleyo ezifana nokushisa okuphezulu, uxinzelelo oluphezulu kunye nemitha eqinile, ukusebenza kwe-silicon carbide kusazinzile njengangaphambili. Eli nqaku lenza ukuba i-silicon carbide epitaxial disk igcine ukusebenza kakuhle kwindawo enzima.
二、inkqubo yokuvelisa: iqingqwe ngononophelo
Iinkqubo eziphambili zokwenza i-SIC epitaxial disk ibandakanya i-physical vapor deposition (PVD), i-chemical vapor deposition (CVD) kunye nokukhula kwe-epitaxial. Nganye kwezi nkqubo zineempawu zayo kwaye zifuna ulawulo oluchanekileyo lweeparamitha ezahlukeneyo ukufezekisa iziphumo ezilungileyo.
1. Inkqubo ye-PVD: Ngokufudumala okanye ukutshiza kunye nezinye iindlela, i-SiC target ifakwe kwi-substrate ukwenza ifilimu. Ifilimu elungiselelwe yile ndlela inokucoceka okuphezulu kunye ne-crystallinity enhle, kodwa isantya sokuvelisa sincinci.
2. Inkqubo ye-CVD: Ngokuqhekeza i-silicon carbide source gas kwiqondo lokushisa eliphezulu, ifakwe kwi-substrate ukwenza ifilimu encinci. Ubunzima kunye nokufana kwefilimu elungiselelwe yile ndlela iyalawuleka, kodwa ukucoceka kunye ne-crystallinity akubi.
3. Ukukhula kwe-Epitaxial: ukukhula kwe-SiC epitaxial layer kwi-silicon ye-monocrystalline okanye ezinye izinto ze-monocrystalline nge-chemical vapor deposition method. I-epitaxial layer elungiselelwe yile ndlela inokuhambelana kakuhle kunye nokusebenza okugqwesileyo kunye ne-substrate material, kodwa ixabiso liphezulu kakhulu.
三、Ithemba lesicelo: Khanyisa ikamva
Ngophuhliso oluqhubekayo lwetekhnoloji ye-elektroniki yamandla kunye nemfuno eyandayo yokusebenza okuphezulu kunye nokuthembeka okuphezulu kwezixhobo zombane, i-silicon carbide epitaxial disk inethemba elibanzi lesicelo kwimveliso yesixhobo se-semiconductor. Isetyenziselwa ngokubanzi ukuveliswa kwezixhobo eziphezulu ze-semiconductor zamandla aphezulu, ezifana nokutshintsha kombane wombane, ii-inverters, ii-rectifiers, njl. Ukongeza, isetyenziswa ngokubanzi kwiiseli zelanga, i-LED kunye nezinye iindawo.
Ngeenzuzo zayo zokusebenza ezizodwa kunye nokuphuculwa okuqhubekayo kwenkqubo yokuvelisa, i-silicon carbide epitaxial disk ngokuthe ngcembe ibonisa amandla ayo amakhulu kwintsimi ye-semiconductor. Sinesizathu sokukholelwa ukuba kwikamva lenzululwazi nobugcisa, iya kuba nendima ebaluleke ngakumbi.
Ixesha lokuposa: Nov-28-2023