Ukusetyenziswa kwamalungu egraphite agqunywe yi-TaC

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I-Crucible, isibambi sembewu kunye neringi yesikhokelo kwi-SiC kunye ne-AIN yomlilo yekristale enye yakhuliswa yindlela ye-PVT

Njengoko kubonisiwe kwi-Figure 2 [1], xa indlela yokuthutha umphunga womzimba (PVT) isetyenziselwa ukulungiselela i-SiC, ikristale yembewu ikwindawo yobushushu obuphantsi, i-SiC eluhlaza ikwindawo yobushushu obuphezulu (ngaphezu kwe-2400).℃), kwaye i-raw material ibola ukuvelisa i-SiXCy (ikakhulukazi iquka i-Si, i-SiC₂, Si₂C, njl.).Izinto zesigaba somphunga zithuthwa ukusuka kwindawo yobushushu obuphezulu ukuya kwikristale yembewu kwindawo yobushushu obuphantsi, forming imbewu nuclei, ukukhula, kunye nokuvelisa crystals enye.Izinto zentsimi ye-thermal ezisetyenziswe kule nkqubo, ezifana ne-crucible, i-flow guide ring, i-seed crystal holder, kufuneka ixhathise ukushisa okuphezulu kwaye ayiyi kungcolisa izinto ze-SiC kunye ne-crystals ye-SiC enye.Ngokufanayo, izinto zokufudumeza ekukhuleni kweekristale enye ye-AlN kufuneka zixhathise kumphunga we-Al, N.₂umhlwa, kwaye kufuneka ube nobushushu obuphezulu be-eutectic (nge AlN) ukunciphisa ixesha lokulungiselela ikristale.

Kwafunyaniswa ukuba iSiC[2-5] kunye ne-AlN[2-3] zilungiswe yiI-TaC iqatyweIzixhobo ze-graphite thermal field zazicocekile, phantse akukho khabhoni (oksijini, initrogen) kunye nobunye ukungcola, iziphene ezimbalwa ezisecaleni, ukuxhathisa okuncinci kwingingqi nganye, kunye noxinaniso lwemicropore kunye nokuxinana komngxuma kuncitshiswe kakhulu (emva kokufakwa kwe-KOH), kunye nomgangatho wekristale. yaphuculwa kakhulu.Ukwengeza,I-TaC crucibleizinga lokulahleka kwesisindo liphantse liyi-zero, imbonakalo ayingonakalisi, inokuphinda isetyenziswe (ubomi ukuya kwi-200h), inokuphucula ukuzinza kunye nokusebenza kakuhle kokulungiswa kwekristale enye.

IKHIWANE.2. (a) I-Schematic diagram ye-SiC single crystal ingot yesixhobo sokukhulisa isixhobo ngendlela ye-PVT
(b) PhezuluI-TaC iqatyweisibiyeli sembewu (kubandakanywa nembewu yeSiC)
(c)Iringi ye-graphite efakwe kwi-TAC

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MOCVD GaN epitaxial umaleko okhulayo heater

Njengoko kubonisiwe kwi-Figure 3 (a), ukukhula kwe-MOCVD GaN yitekhnoloji yokubeka umphunga wekhemikhali usebenzisa i-organometrical decomposition reaction to grow the thin films by vapor epitaxial growth.Ukuchaneka kweqondo lokushisa kunye nokufana kwi-cavity kwenza i-heater ibe yinto ebaluleke kakhulu kwisixhobo se-MOCVD.Ingaba i-substrate inokufudumeza ngokukhawuleza kwaye ifane ixesha elide (phantsi kokupholisa ngokuphindaphindiweyo), ukuzinza kwiqondo lokushisa eliphezulu (ukuchasana ne-corrosion yegesi) kunye nokucoceka kwefilimu kuya kuchaphazela ngokuthe ngqo umgangatho wokubekwa kwefilimu, ukuhambelana kobunzima, kunye nokusebenza kwetshiphu.

Ukuze kuphuculwe ukusebenza kunye nokusebenza ngokutsha kwe-heater kwinkqubo yokukhula ye-MOCVD GaN,TAC-igqunyweIsifudumezi segraphite saziswa ngempumelelo.Xa kuthelekiswa ne-GaN epitaxial layer ekhuliswe sisifudumezi esiqhelekileyo (sisebenzisa i-pBN coating), i-GaN epitaxial layer ekhuliswe sisifudumezi se-TaC iphantse yafana nekristale yokwakheka, ukufana kobukhulu, iziphene zangaphakathi, idoping yokungacoceki kunye nosulelo.Ukongeza, iTaC ukutyabekaine-resistiveivity ephantsi kunye ne-low surface emissivity, enokuphucula ukusebenza kunye nokufana kwe-heater, ngaloo ndlela inciphisa ukusetyenziswa kwamandla kunye nokulahlekelwa kobushushu.I-porosity yokwambathisa inokulungelelaniswa ngokulawula iiparamitha zenkqubo ukuqhubela phambili ukuphucula iimpawu zemitha yesifudumezi kunye nokwandisa ubomi bayo benkonzo [5].Ezi nzuzo zenzaI-TaC iqatyweizifudumezi zegraphite ukhetho olubalaseleyo kwiinkqubo zokukhula ze-MOCVD GaN.

IKHIWANE.3. (a) Umzobo weSchematic wesixhobo se-MOCVD sokukhula kwe-GaN epitaxial
(b) Isifudumezi segraphite esibunjiweyo esifakwe kwi-TAC efakwe kwi-MOCVD, ngaphandle kwesiseko kunye nesibiyeli (umfanekiso obonisa isiseko kunye nesibiyeli kwisifudumezi)
(c) I-TAC-coated graphite heater emva kwe-17 GaN epitaxial ukukhula.[6]

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I-susceptor egqunywe i-epitaxy (i-wafer carrier)

I-Wafer carrier iyinxalenye ebalulekileyo yesakhiwo sokulungiselela i-SiC, i-AlN, i-GaN kunye nezinye i-wafers ze-semiconductor zeklasi yesithathu kunye nokukhula kwe-epitaxial wafer.Uninzi lwabathwali be-wafer benziwe ngegraphite kwaye bagqunywe nge-SiC coating ukuxhathisa ukubola ukusuka kwiigesi zenkqubo, kunye nomgangatho wobushushu be-epitaxial we-1100 ukuya kwi-1600.°C, kunye nokumelana nokubola kwengubo ekhuselayo kudlala indima ebalulekileyo kubomi bomntu ophethe i-wafer.Iziphumo zibonisa ukuba izinga lokutya kwe-TaC licotha ka-6 kune-SiC kubushushu obuphezulu be-ammonia.Kwiqondo lobushushu obuphezulu be-hydrogen, izinga lokutya licotha nangaphezu kwamaxesha ali-10 kuneSiC.

Kungqinwe ngovavanyo ukuba iitreyi ezigqunywe nge-TaC zibonisa ukuhambelana okuhle kwinkqubo yokukhanya okuluhlaza kwe-GaN MOCVD kwaye azizisi ukungcola.Emva kohlengahlengiso olulinganiselweyo lwenkqubo, iilethi ezikhuliswe kusetyenziswa abathwali be-TaC babonisa ukusebenza okufanayo kunye nokufana njengabathwali beSiC abaqhelekileyo.Ngoko ke, ubomi benkonzo ye-TAC-coated pallets bungcono kune-inki yelitye elingenanto kunyeSiC coatediipaliti zegraphite.