Ubushushu obuphezulu kunye nokunganyangeki kwe-LED Silicon Carbide etching tray (ICP etching tray)

Ubushushu obuphezulu kunye nokumelana nokubola kwe-LED Silicon Carbide etching tray (ICP etching tray) Umfanekiso ofakiweyo

Inkcazelo emfutshane:

I-Semicera Energy Technology Co., Ltd. ngumboneleli okhokelayo okhethekileyo kwi-wafer kunye ne-semiconductor consumables ephezulu.Sizinikezele ekunikezeni umgangatho ophezulu, othembekileyo, kunye neemveliso ezintsha kwimveliso ye-semiconductor,imboni ye-photovoltaickunye neminye imimandla enxulumeneyo.

Umgca wethu wemveliso uquka i-SiC/TaC egqunywe ngeemveliso zegraphite kunye neemveliso ze-ceramic, ezibandakanya izinto ezahlukeneyo ezifana ne-silicon carbide, i-silicon nitride, kunye ne-aluminium oxide kunye nokunye.

Njengomthengisi othembekileyo, siyakuqonda ukubaluleka kwezinto ezisetyenziswayo kwinkqubo yokwenziwa kwemveliso, kwaye sizimisele ukuhambisa iimveliso ezihlangabezana nemigangatho ephezulu yomgangatho wokuzalisekisa iimfuno zabathengi bethu.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Ingcaciso yeMveliso

Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC.

Iimpawu eziphambili:

1. Ukumelana nobushushu obuphezulu be-oxidation:

Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.

2. Ukucoceka okuphezulu : yenziwe yi-chemical vapor deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.

3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.

4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye nee-reagents eziphilayo.

1111111斯蒂芬森

I-Graphite Rigid Ivakele kwi-Vacuum Furnace

1111111111111111

IiNgcaciso eziphambili ze-CVD-SIC Coating

Iipropati zeSiC-CVD
Ulwakhiwo lweCrystal	FCC isigaba β
Ukuxinana	g/cm ³	3.21
Ukuqina	Vickers ubulukhuni	2500
Ubungakanani benkozo	μm	2~10
Ucoceko lweMichiza	%	99.99995
Ubushushu Umthamo	J·kg-1 ·K-1	640
Ubushushu bokunciphisa	℃	2700
Amandla eFelexural	MPa (RT 4-point)	415
Imodulus eselula	I-Gpa (4pt bend, 1300℃)	430
Ukwandiswa kweThermal (CTE)	10-6K-1	4.5
I-Thermal conductivity	(W/mK)	300