I-Epitaxy Wafer Carrier licandelo elibalulekileyo kwimveliso ye-semiconductor, ngakumbi kwiYiyo EpitaxykwayeSiC Epitaxyiinkqubo. I-Semicera iyila ngononophelo kwaye iveliseWaferAbathwali ukumelana namaqondo obushushu aphezulu kakhulu kunye nokusingqongileyo imichiza, ukuqinisekisa ukusebenza okugqwesileyo kwizicelo ezifanaI-MOCVD Susceptorkunye ne-Barrel Susceptor. Ingaba i-deposition ye-silicon ye-monocrystalline okanye iinkqubo ze-epitaxy eziyinkimbinkimbi, i-Semicera's Epitaxy Wafer Carrier ibonelela ngokufana okugqwesileyo kunye nokuzinza.
IiSemicera'sI-Epitaxy Wafer Carrieryenziwe ngezinto eziphambili kunye namandla omatshini agqwesileyo kunye ne-thermal conductivity, enokunciphisa ngokufanelekileyo ilahleko kunye nokungazinzi ngexesha lenkqubo. Ukongeza, uyilo lweWaferUmthwali unokuziqhelanisa nezixhobo ze-epitaxy zobukhulu obahlukeneyo, ngaloo ndlela iphucula ukusebenza kakuhle kwemveliso.
Kubathengi abafuna ukuchaneka okuphezulu kunye neenkqubo ze-epitaxy eziphezulu, i-Epitaxy Wafer Carrier ye-Semicera yinto ethembekileyo. Sihlala sizibophelele ekuboneleleni abathengi ngomgangatho ogqwesileyo wemveliso kunye nenkxaso yobugcisa ethembekileyo ukunceda ukuphucula ukuthembeka nokusebenza kakuhle kweenkqubo zokuvelisa.
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Epitaxy Growth Susceptor
I-silicon / i-silicon carbide wafers kufuneka ihambe kwiinkqubo ezininzi eziza kusetyenziswa kwizixhobo zombane. Inkqubo ebalulekileyo yi-silicon / i-sic epitaxy, apho i-silicon / i-sic wafers iqhutyelwa kwisiseko segraphite. Izibonelelo ezikhethekileyo zeSemicera's silicon carbide-coated-coated graphite base ibandakanya ukucoceka okuphezulu kakhulu, ukutyabeka okufanayo, kunye nobomi benkonzo ende kakhulu. Kananjalo banokumelana neekhemikhali eziphezulu kunye nokuzinza kwe-thermal.
Ukuveliswa kweChip ye-LED
Ngethuba lokugquma okubanzi kwe-reactor ye-MOCVD, isiseko seplanethi okanye umthwali uhambisa i-wafer substrate. Ukusebenza kwezinto ezisisiseko kunempembelelo enkulu kumgangatho wokugquma, nto leyo echaphazela izinga le-scrap ye-chip. Isiseko seSemicera's silicon carbide-coated base sonyusa ukusebenza kakuhle kweewafers ze-LED ezikumgangatho ophezulu kunye nokunciphisa ukutenxa kobude bamaza. Sikwabonelela ngezixhobo ezongezelelweyo zegraphite kuzo zonke iireactor zeMOCVD ezisetyenziswayo ngoku. Sinako ukunxiba phantse naliphi na icandelo nge-silicon carbide coating, nokuba i-diameter yecandelo ifikelela kwi-1.5M, sisenokwambatha ngesilicon carbide.
Ummandla weSemiconductor, Inkqubo ye-Oxidation Diffusion, njl.
Kwinkqubo ye-semiconductor, inkqubo yokwandiswa kwe-oxidation ifuna ukucoceka okuphezulu kwemveliso, kwaye kwi-Semicera sinikezela ngeenkonzo zesiko kunye ne-CVD yokwambathisa uninzi lweengxenye ze-silicon carbide.
Lo mfanekiso ulandelayo ubonisa i-silicon carbide slurry esekwe ngokurhabaxa ye-Semicea kunye ne-silicon carbide furnace tyhubhu ecocwe kwi-100.0-kwinqanabaengenathuliigumbi. Abasebenzi bethu basebenza ngaphambi kokulala. Ukucoceka kwe-silicon carbide yethu kunokufikelela kwi-99.98%, kwaye ukucoceka kwe-sic coating kukhulu kune-99.9995%..