I-CVD Silicon Carbide SiC Etching Ring

CVD Silicon Carbide SiC Etching Ring Featured Umfanekiso

Inkcazelo emfutshane:

I-Semicera ibonelela ngomgangatho ophezulu weCVD Silicon Carbide(SiC) i-Etching Ring kunye neenkonzo ezilungiselelweyo. I-CVD Silicon Carbide yethu (SiC) ye-Etching Ring inomgangatho ogqwesileyo kunye nokusebenza, yenzelwe amanyathelo okutsala ukubonelela ngokusebenza okuzinzileyo kunye neziphumo ezigqwesileyo zokutsala. I-Semicera ijonge phambili ekusekeni intsebenziswano yexesha elide kunye nawe eTshayina.

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Iinkcukacha zeMveliso

Iithegi zeMveliso

Kutheni i-CVD SiC Etching Ring?

I-CVD Silicon Carbide(SiC) i-Etching Ring yinxalenye ekhethekileyo eyenziwe nge-Silicon Carbide (SiC) isebenzisa indlela ye-Chemical Vapor Deposition (CVD). I-CVD Silicon Carbide(SiC) i-Etching Ring idlala indima ephambili kwiintlobo ngeentlobo zezicelo zemizi-mveliso, ngakumbi kwiinkqubo ezibandakanya ukufakwa kwezinto. I-Silicon Carbide yimathiriyeli ye-ceramic ekhethekileyo kunye nephucukileyo eyaziwayo ngeempawu zayo ezibalaseleyo, kubandakanya ukuqina okuphezulu, ukuhanjiswa kwe-thermal okugqwesileyo kunye nokuchasana nemo engqongileyo yeekhemikhali.

Inkqubo ye-Chemical Vapor Deposition ibandakanya ukubeka umaleko obhityileyo we-SiC kwi-substrate kwindawo elawulwayo, okukhokelela ekucocekeni okuphezulu kunye nezinto ezenziwe ngobunjineli ngokuchanekileyo. I-CVD Silicon Carbide yaziwa ngokuba yiyunifomu yayo kunye ne-microstructure exineneyo, amandla agqwesileyo oomatshini kunye nozinzo olongeziweyo lobushushu.

I-CVD Silicon Carbide(SiC) i-Etching Ring yenziwe nge-CVD Silicon Carbide, engaqinisekisi kuphela ukuqina okugqwesileyo, kodwa ixhathisa ukubola kweekhemikhali kunye notshintsho olugqithisileyo lobushushu. Oku kuyenza ilungele izicelo apho ukuchaneka, ukuthembeka kunye nobomi kubalulekile.

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Isicelo

Epitaxy Growth Susceptor

I-silicon / i-silicon carbide wafers kufuneka ihambe kwiinkqubo ezininzi eziza kusetyenziswa kwizixhobo zombane. Inkqubo ebalulekileyo yi-silicon / i-sic epitaxy, apho i-silicon / i-sic wafers iqhutyelwa kwisiseko segraphite. Izibonelelo ezikhethekileyo zeSemicera's silicon carbide-coated-coated graphite base ibandakanya ukucoceka okuphezulu kakhulu, ukutyabeka okufanayo, kunye nobomi benkonzo ende kakhulu. Kananjalo banokumelana neekhemikhali eziphezulu kunye nokuzinza kwe-thermal.

I-Silicon Epitaxy Susceptor

I-Silicon Carbide Epitaxy Susceptor

Ukuveliswa kweChip ye-LED

Ngethuba lokugquma okubanzi kwe-reactor ye-MOCVD, isiseko seplanethi okanye umthwali uhambisa i-wafer substrate. Ukusebenza kwezinto ezisisiseko kunempembelelo enkulu kumgangatho wokugquma, nto leyo echaphazela izinga le-scrap ye-chip. Isiseko seSemicera's silicon carbide-coated base sonyusa ukusebenza kakuhle kweewafers ze-LED ezikumgangatho ophezulu kunye nokunciphisa ukutenxa kobude bamaza. Sikwabonelela ngezixhobo ezongezelelweyo zegraphite kuzo zonke iireactor zeMOCVD ezisetyenziswayo ngoku. Sinako ukunxiba phantse naliphi na icandelo nge-silicon carbide coating, nokuba i-diameter yecandelo ifikelela kwi-1.5M, sisenokwambatha ngesilicon carbide.

I-LED Epitaxy Susceptor

Ummandla weSemiconductor, Inkqubo ye-Oxidation Diffusion, njl.

Kwinkqubo ye-semiconductor, inkqubo yokwandiswa kwe-oxidation ifuna ukucoceka okuphezulu kwemveliso, kwaye kwi-Semicera sinikezela ngeenkonzo zesiko kunye ne-CVD yokwambathisa uninzi lweengxenye ze-silicon carbide.

Lo mfanekiso ulandelayo ubonisa i-silicon carbide slurry esekwe ngokurhabaxa ye-Semicea kunye ne-silicon carbide furnace tyhubhu ecocwe kwi-100.0-kwinqanabaengenathuliigumbi. Abasebenzi bethu basebenza ngaphambi kokulala. Ukucoceka kwe-silicon carbide yethu kunokufikelela kwi-99.99%, kwaye ukucoceka kwe-sic coating kukhulu kune-99.99995%